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Current in Inversion Channel of PMOS given Mobility Formula

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The drift velocity of inversion layer in a MOSFET is the average velocity of the electrons that make up the inversion layer as they move through the material under the influence of an electric field. Check FAQs

V y = μ p \cdot E y

V_y - Drift Velocity of Inversion?μ_p - Mobility of Holes in Channel?E_y - Horizontal Component of Electric Field in Channel?

Current in Inversion Channel of PMOS given Mobility Example

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Here is how the Current in Inversion Channel of PMOS given Mobility equation looks like with Values.

Here is how the Current in Inversion Channel of PMOS given Mobility equation looks like with Units.

Here is how the Current in Inversion Channel of PMOS given Mobility equation looks like.

1463 = 2.66 \cdot 5.5

1463cm/s = 2.66m²/V*s \cdot 5.5V/m

1463 = 2.66 \cdot 5.5

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Current in Inversion Channel of PMOS given Mobility Solution

Follow our step by step solution on how to calculate Current in Inversion Channel of PMOS given Mobility?

FIRST Step Consider the formula

V y = μ p \cdot E y

Next Step Substitute values of Variables

∴

V y = 2.66m²/V*s \cdot 5.5V/m

Next Step Prepare to Evaluate

∴

V y = 2.66 \cdot 5.5

Next Step Evaluate

∴

V y = 14.63m/s

LAST Step Convert to Output's Unit

∴

V y = 1463cm/s

Current in Inversion Channel of PMOS given Mobility Formula Elements

Variables

Drift Velocity of Inversion

The drift velocity of inversion layer in a MOSFET is the average velocity of the electrons that make up the inversion layer as they move through the material under the influence of an electric field.

Symbol: V_y

Measurement: SpeedUnit: cm/s

Note: Value can be positive or negative.

Formulas to find Drift Velocity of Inversion

Mobility of Holes in Channel

Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field.

Symbol: μ_p

Measurement: MobilityUnit: m²/V*s

Note: Value can be positive or negative.

Formulas to find Mobility of Holes in Channel

Horizontal Component of Electric Field in Channel

Horizontal Component of Electric Field in Channel is the strength of the electric field that exists in the material under the gate oxide layer, in the region where the inversion layer is formed.

Symbol: E_y

Measurement: Electric Field StrengthUnit: V/m

Note: Value can be positive or negative.

Formulas to find Horizontal Component of Electric Field in Channel

Other formulas in P Channel Enhancement category

Go Drain Current in Triode Region of PMOS Transistor

I d = k' p \cdot WL \cdot ((V GS - mod \underset{̲}{u} s (V T)) \cdot V DS - \frac{1}{2} \cdot {(V DS)}^{2})

Go Drain Current in Triode Region of PMOS Transistor given Vsd

I d = k' p \cdot WL \cdot (mod \underset{̲}{u} s (V ov) - \frac{1}{2} \cdot V DS) \cdot V DS

Go Drain Current in Saturation Region of PMOS Transistor

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2}

Go Drain Current in Saturation Region of PMOS Transistor given Vov

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V ov)}^{2}

How to Evaluate Current in Inversion Channel of PMOS given Mobility?

Current in Inversion Channel of PMOS given Mobility evaluator uses Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel to evaluate the Drift Velocity of Inversion, The Current in Inversion Channel of PMOS given Mobility formula is defined as the current in the inversion channel of a PMOS transistor is determined by the mobility of the charge carriers in the channel, as well as by the channel width, channel length, and the gate-source voltage. Drift Velocity of Inversion is denoted by V_y symbol.

How to evaluate Current in Inversion Channel of PMOS given Mobility using this online evaluator? To use this online evaluator for Current in Inversion Channel of PMOS given Mobility, enter Mobility of Holes in Channel (μ_p) & Horizontal Component of Electric Field in Channel (E_y) and hit the calculate button.

FAQs on Current in Inversion Channel of PMOS given Mobility

What is the formula to find Current in Inversion Channel of PMOS given Mobility?

The formula of Current in Inversion Channel of PMOS given Mobility is expressed as Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel. Here is an example- 146300 = 2.66*5.5.

How to calculate Current in Inversion Channel of PMOS given Mobility?

With Mobility of Holes in Channel (μ_p) & Horizontal Component of Electric Field in Channel (E_y) we can find Current in Inversion Channel of PMOS given Mobility using the formula - Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel.

Can the Current in Inversion Channel of PMOS given Mobility be negative?

Yes, the Current in Inversion Channel of PMOS given Mobility, measured in Speed can be negative.

Which unit is used to measure Current in Inversion Channel of PMOS given Mobility?

Current in Inversion Channel of PMOS given Mobility is usually measured using the Centimeter per Second[cm/s] for Speed. Meter per Second[cm/s], Meter per Minute[cm/s], Meter per Hour[cm/s] are the few other units in which Current in Inversion Channel of PMOS given Mobility can be measured.

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Current in Inversion Channel of PMOS given Mobility Formula

Current in Inversion Channel of PMOS given Mobility Example

Current in Inversion Channel of PMOS given Mobility Solution

Current in Inversion Channel of PMOS given Mobility Formula Elements

Other formulas in P Channel Enhancement category

How to Evaluate Current in Inversion Channel of PMOS given Mobility?

FAQs on Current in Inversion Channel of PMOS given Mobility

Variable Name