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Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). Check FAQs
Id=(WQpVy)
Id - Drain Current?W - Width of Junction?Qp - Inversion Layer Charge?Vy - Drift Velocity of Inversion?

Current in Inversion Channel of PMOS Example

With values
With units
Only example

Here is how the Current in Inversion Channel of PMOS equation looks like with Values.

Here is how the Current in Inversion Channel of PMOS equation looks like with Units.

Here is how the Current in Inversion Channel of PMOS equation looks like.

29.5965Edit=(1.19Edit0.0017Edit1463Edit)
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Current in Inversion Channel of PMOS Solution

Follow our step by step solution on how to calculate Current in Inversion Channel of PMOS?

FIRST Step Consider the formula
Id=(WQpVy)
Next Step Substitute values of Variables
Id=(1.19m0.0017C/m²1463cm/s)
Next Step Convert Units
Id=(1.19m0.0017C/m²14.63m/s)
Next Step Prepare to Evaluate
Id=(1.190.001714.63)
Next Step Evaluate
Id=0.02959649A
Next Step Convert to Output's Unit
Id=29.59649mA
LAST Step Rounding Answer
Id=29.5965mA

Current in Inversion Channel of PMOS Formula Elements

Variables
Drain Current
Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Symbol: Id
Measurement: Electric CurrentUnit: mA
Note: Value should be greater than 0.
Width of Junction
Width of junction is the parameter which signifies how wide is the base junction of any analog electronics element.
Symbol: W
Measurement: LengthUnit: m
Note: Value can be positive or negative.
Inversion Layer Charge
Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.
Symbol: Qp
Measurement: Surface Charge DensityUnit: C/m²
Note: Value can be positive or negative.
Drift Velocity of Inversion
The drift velocity of inversion layer in a MOSFET is the average velocity of the electrons that make up the inversion layer as they move through the material under the influence of an electric field.
Symbol: Vy
Measurement: SpeedUnit: cm/s
Note: Value can be positive or negative.

Other Formulas to find Drain Current

​Go Drain Current in Triode Region of PMOS Transistor
Id=k'pWL((VGS-modu̲s(VT))VDS-12(VDS)2)
​Go Drain Current in Triode Region of PMOS Transistor given Vsd
Id=k'pWL(modu̲s(Vov)-12VDS)VDS
​Go Overall Drain Current of PMOS Transistor
Id=12k'pWL(VGS-modu̲s(VT))2(1+VDSmodu̲s(Va))
​Go Drain Current from Source to Drain
Id=(WQpμpEy)

Other formulas in P Channel Enhancement category

​Go Drain Current in Saturation Region of PMOS Transistor
Ids=12k'pWL(VGS-modu̲s(VT))2
​Go Drain Current in Saturation Region of PMOS Transistor given Vov
Ids=12k'pWL(Vov)2
​Go Process Transconductance Parameter of PMOS
k'p=μpCox
​Go Current in Inversion Channel of PMOS given Mobility
Vy=μpEy

How to Evaluate Current in Inversion Channel of PMOS?

Current in Inversion Channel of PMOS evaluator uses Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion) to evaluate the Drain Current, The Current in Inversion Channel of PMOS formula is defined as the current in the inversion channel is an important parameter for PMOS transistor operation as it determines the functionality of the transistor, such as its gain and output characteristics. Drain Current is denoted by Id symbol.

How to evaluate Current in Inversion Channel of PMOS using this online evaluator? To use this online evaluator for Current in Inversion Channel of PMOS, enter Width of Junction (W), Inversion Layer Charge (Qp) & Drift Velocity of Inversion (Vy) and hit the calculate button.

FAQs on Current in Inversion Channel of PMOS

What is the formula to find Current in Inversion Channel of PMOS?
The formula of Current in Inversion Channel of PMOS is expressed as Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion). Here is an example- 29596.49 = (1.19*0.0017*14.63).
How to calculate Current in Inversion Channel of PMOS?
With Width of Junction (W), Inversion Layer Charge (Qp) & Drift Velocity of Inversion (Vy) we can find Current in Inversion Channel of PMOS using the formula - Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion).
What are the other ways to Calculate Drain Current?
Here are the different ways to Calculate Drain Current-
  • Drain Current=Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)OpenImg
  • Drain Current=Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and SourceOpenImg
  • Drain Current=1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))OpenImg
Can the Current in Inversion Channel of PMOS be negative?
No, the Current in Inversion Channel of PMOS, measured in Electric Current cannot be negative.
Which unit is used to measure Current in Inversion Channel of PMOS?
Current in Inversion Channel of PMOS is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Current in Inversion Channel of PMOS can be measured.
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