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Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). Check FAQs
Id=k'n⋅WcL⋅Vds⋅(Vov-12⋅Vds)
Id - Drain Current in NMOS?k'n - Process Transconductance Parameter in NMOS?Wc - Width of Channel?L - Length of the Channel?Vds - Drain Source Voltage?Vov - Overdrive Voltage in NMOS?

Current Entering Drain Terminal of NMOS Example

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Here is how the Current Entering Drain Terminal of NMOS equation looks like with Values.

Here is how the Current Entering Drain Terminal of NMOS equation looks like with Units.

Here is how the Current Entering Drain Terminal of NMOS equation looks like.

239.693Edit=2Edit⋅10Edit3Edit⋅8.43Edit⋅(8.48Edit-12⋅8.43Edit)
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Current Entering Drain Terminal of NMOS Solution

Follow our step by step solution on how to calculate Current Entering Drain Terminal of NMOS?

FIRST Step Consider the formula
Id=k'n⋅WcL⋅Vds⋅(Vov-12⋅Vds)
Next Step Substitute values of Variables
∴ Id=2mS⋅10μm3μm⋅8.43V⋅(8.48V-12⋅8.43V)
Next Step Convert Units
∴ Id=0.002S⋅1E-5m3E-6m⋅8.43V⋅(8.48V-12⋅8.43V)
Next Step Prepare to Evaluate
∴ Id=0.002⋅1E-53E-6⋅8.43⋅(8.48-12⋅8.43)
Next Step Evaluate
∴Id=0.239693A
LAST Step Convert to Output's Unit
∴Id=239.693mA

Current Entering Drain Terminal of NMOS Formula Elements

Variables
Drain Current in NMOS
Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Symbol: Id
Measurement: Electric CurrentUnit: mA
Note: Value should be greater than 0.
Formulas to find Drain Current in NMOSOpen Variable
Process Transconductance Parameter in NMOS
The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Symbol: k'n
Measurement: Electric ConductanceUnit: mS
Note: Value can be positive or negative.
Formulas to find Process Transconductance Parameter in NMOSOpen Variable
Width of Channel
The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.
Symbol: Wc
Measurement: LengthUnit: μm
Note: Value can be positive or negative.
Formulas to find Width of ChannelOpen Variable
Length of the Channel
Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.
Symbol: L
Measurement: LengthUnit: μm
Note: Value can be positive or negative.
Formulas to find Length of the ChannelOpen Variable
Drain Source Voltage
Drain Source Voltage is an electrical term used in electronics and specifically in field-effect transistors . It refers to the voltage difference between the Drain and Source terminals of the FET.
Symbol: Vds
Measurement: Electric PotentialUnit: V
Note: Value can be positive or negative.
Formulas to find Drain Source VoltageOpen Variable
Overdrive Voltage in NMOS
Overdrive voltage in NMOS typically refers to the voltage applied to a device or component that exceeds its normal operating voltage.
Symbol: Vov
Measurement: Electric PotentialUnit: V
Note: Value can be positive or negative.
Formulas to find Overdrive Voltage in NMOSOpen Variable

Other Formulas to find Drain Current in NMOS

​Go Current Entering Drain Terminal of NMOS given Gate Source Voltage
Id=k'n⋅WcL⋅((Vgs-VT)⋅Vds-12⋅Vds2)
​Go Current Entering Drain-Source in Triode Region of NMOS
Id=k'n⋅WcL⋅((Vgs-VT)⋅Vds-12⋅(Vds)2)
​Go Current Entering Drain-Source at Saturation Region of NMOS
Id=12⋅k'n⋅WcL⋅(Vgs-VT)2
​Go Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS
Id=12⋅k'n⋅WcL⋅(Vds)2

Other formulas in N Channel Enhancement category

​Go Electron Drift Velocity of Channel in NMOS Transistor
vd=μn⋅EL
​Go NMOS as Linear Resistance
rDS=Lμn⋅Cox⋅Wc⋅(Vgs-VT)
​Go Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage
Ids=12⋅k'n⋅WcL⋅(Vov)2
​Go Positive Voltage given Channel Length in NMOS
V=VA⋅L

How to Evaluate Current Entering Drain Terminal of NMOS?

Current Entering Drain Terminal of NMOS evaluator uses Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage) to evaluate the Drain Current in NMOS, The current entering drain terminal of NMOS, MOSFETs only switch current flowing in one direction; they have a diode between source and drain in the other direction (in other words, if the drain (on an N-channel device) falls below the voltage on the source, the current will flow from the source to the drain). Drain Current in NMOS is denoted by Id symbol.

How to evaluate Current Entering Drain Terminal of NMOS using this online evaluator? To use this online evaluator for Current Entering Drain Terminal of NMOS, enter Process Transconductance Parameter in NMOS (k'n), Width of Channel (Wc), Length of the Channel (L), Drain Source Voltage (Vds) & Overdrive Voltage in NMOS (Vov) and hit the calculate button.

FAQs on Current Entering Drain Terminal of NMOS

What is the formula to find Current Entering Drain Terminal of NMOS?
The formula of Current Entering Drain Terminal of NMOS is expressed as Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage). Here is an example- 239693 = 0.002*1E-05/3E-06*8.43*(8.48-1/2*8.43).
How to calculate Current Entering Drain Terminal of NMOS?
With Process Transconductance Parameter in NMOS (k'n), Width of Channel (Wc), Length of the Channel (L), Drain Source Voltage (Vds) & Overdrive Voltage in NMOS (Vov) we can find Current Entering Drain Terminal of NMOS using the formula - Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage).
What are the other ways to Calculate Drain Current in NMOS?
Here are the different ways to Calculate Drain Current in NMOS-
  • Drain Current in NMOS=Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)OpenImg
  • Drain Current in NMOS=Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)OpenImg
  • Drain Current in NMOS=1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2OpenImg
Can the Current Entering Drain Terminal of NMOS be negative?
No, the Current Entering Drain Terminal of NMOS, measured in Electric Current cannot be negative.
Which unit is used to measure Current Entering Drain Terminal of NMOS?
Current Entering Drain Terminal of NMOS is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Current Entering Drain Terminal of NMOS can be measured.
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