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Current Entering Drain Terminal of MOSFET at Saturation Formula

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Saturation drain current is defined as the subthreshold current and varies exponentially with gate to source voltage. Check FAQs

i ds = \frac{1}{2} \cdot k' n \cdot (\frac{W c}{L}) \cdot {(V ov)}^{2}

i_ds - Saturation Drain Current?k'_n - Process Transconductance Parameter?W_c - Width of Channel?L - Length of Channel?V_ov - Effective Voltage?

Current Entering Drain Terminal of MOSFET at Saturation Example

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Here is how the Current Entering Drain Terminal of MOSFET at Saturation equation looks like with Values.

Here is how the Current Entering Drain Terminal of MOSFET at Saturation equation looks like with Units.

Here is how the Current Entering Drain Terminal of MOSFET at Saturation equation looks like.

4.7249 = \frac{1}{2} \cdot 0.2 \cdot (\frac{10.15}{3.25}) \cdot {(0.123)}^{2}

4.7249mA = \frac{1}{2} \cdot 0.2A/V² \cdot (\frac{10.15μm}{3.25μm}) \cdot {(0.123V)}^{2}

4.7249 = \frac{1}{2} \cdot 0.2 \cdot (\frac{10.15}{3.25}) \cdot {(0.123)}^{2}

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Current Entering Drain Terminal of MOSFET at Saturation Solution

Follow our step by step solution on how to calculate Current Entering Drain Terminal of MOSFET at Saturation?

FIRST Step Consider the formula

i ds = \frac{1}{2} \cdot k' n \cdot (\frac{W c}{L}) \cdot {(V ov)}^{2}

Next Step Substitute values of Variables

∴

i ds = \frac{1}{2} \cdot 0.2A/V² \cdot (\frac{10.15μm}{3.25μm}) \cdot {(0.123V)}^{2}

Next Step Convert Units

∴

i ds = \frac{1}{2} \cdot 0.2A/V² \cdot (\frac{1E-5m}{3.3E-6m}) \cdot {(0.123V)}^{2}

Next Step Prepare to Evaluate

∴

i ds = \frac{1}{2} \cdot 0.2 \cdot (\frac{1E-5}{3.3E-6}) \cdot {(0.123)}^{2}

Next Step Evaluate

∴

i ds = 0.00472490307692308A

Next Step Convert to Output's Unit

∴

i ds = 4.72490307692308mA

LAST Step Rounding Answer

∴

i ds = 4.7249mA

Current Entering Drain Terminal of MOSFET at Saturation Formula Elements

Variables

Saturation Drain Current

Saturation drain current is defined as the subthreshold current and varies exponentially with gate to source voltage.

Symbol: i_ds

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Saturation Drain Current

Process Transconductance Parameter

Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance.

Symbol: k'_n

Measurement: Transconductance ParameterUnit: A/V²

Note: Value should be greater than 0.

Formulas to find Process Transconductance Parameter

Width of Channel

Width of Channel is the dimension of the channel of MOSFET.

Symbol: W_c

Measurement: LengthUnit: μm

Note: Value should be greater than 0.

Formulas to find Width of Channel

Length of Channel

The length of channel, L, which is the distance between the two -p junctions.

Symbol: L

Measurement: LengthUnit: μm

Note: Value should be greater than 0.

Formulas to find Length of Channel

Effective Voltage

Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed.

Symbol: V_ov

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Effective Voltage

Other formulas in Transistor Amplifier Characteristics category

Go Total Instantaneous Drain Voltage

V d = V fc - R d \cdot i d

Go Current Flowing through Induced Channel in Transistor given Oxide Voltage

i o = (μ e \cdot C ox \cdot (\frac{W c}{L}) \cdot (V ox - V t)) \cdot V ds

Go Input Voltage in Transistor

V fc = R d \cdot i d - V d

Go Test Current of Transistor Amplifier

i x = \frac{V x}{R in}

How to Evaluate Current Entering Drain Terminal of MOSFET at Saturation?

Current Entering Drain Terminal of MOSFET at Saturation evaluator uses Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2 to evaluate the Saturation Drain Current, The Current entering drain terminal of MOSFET at saturation is the drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Saturation Drain Current is denoted by i_ds symbol.

How to evaluate Current Entering Drain Terminal of MOSFET at Saturation using this online evaluator? To use this online evaluator for Current Entering Drain Terminal of MOSFET at Saturation, enter Process Transconductance Parameter (k'_n), Width of Channel (W_c), Length of Channel (L) & Effective Voltage (V_ov) and hit the calculate button.

FAQs on Current Entering Drain Terminal of MOSFET at Saturation

What is the formula to find Current Entering Drain Terminal of MOSFET at Saturation?

The formula of Current Entering Drain Terminal of MOSFET at Saturation is expressed as Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2. Here is an example- 4724.903 = 1/2*0.2*(1.015E-05/3.25E-06)*(0.123)^2.

How to calculate Current Entering Drain Terminal of MOSFET at Saturation?

With Process Transconductance Parameter (k'_n), Width of Channel (W_c), Length of Channel (L) & Effective Voltage (V_ov) we can find Current Entering Drain Terminal of MOSFET at Saturation using the formula - Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2.

Can the Current Entering Drain Terminal of MOSFET at Saturation be negative?

No, the Current Entering Drain Terminal of MOSFET at Saturation, measured in Electric Current cannot be negative.

Which unit is used to measure Current Entering Drain Terminal of MOSFET at Saturation?

Current Entering Drain Terminal of MOSFET at Saturation is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Current Entering Drain Terminal of MOSFET at Saturation can be measured.

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Current Entering Drain Terminal of MOSFET at Saturation Formula

Current Entering Drain Terminal of MOSFET at Saturation Example

Current Entering Drain Terminal of MOSFET at Saturation Solution

Current Entering Drain Terminal of MOSFET at Saturation Formula Elements

Other formulas in Transistor Amplifier Characteristics category

How to Evaluate Current Entering Drain Terminal of MOSFET at Saturation?

FAQs on Current Entering Drain Terminal of MOSFET at Saturation

Variable Name