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Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Formula

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Saturation drain current below threshold voltage is defined as the sub threshold current and varies exponentially with gate to source voltage. Check FAQs

I ds = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V ov)}^{2}

I_ds - Saturation Drain Current?k'_n - Process Transconductance Parameter in NMOS?W_c - Width of Channel?L - Length of the Channel?V_ov - Overdrive Voltage in NMOS?

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Example

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Here is how the Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage equation looks like with Values.

Here is how the Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage equation looks like with Units.

Here is how the Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage equation looks like.

239.7013 = \frac{1}{2} \cdot 2 \cdot \frac{10}{3} \cdot {(8.48)}^{2}

239.7013mA = \frac{1}{2} \cdot 2mS \cdot \frac{10μm}{3μm} \cdot {(8.48V)}^{2}

239.7013 = \frac{1}{2} \cdot 2 \cdot \frac{10}{3} \cdot {(8.48)}^{2}

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Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Solution

Follow our step by step solution on how to calculate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

FIRST Step Consider the formula

I ds = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V ov)}^{2}

Next Step Substitute values of Variables

∴

I ds = \frac{1}{2} \cdot 2mS \cdot \frac{10μm}{3μm} \cdot {(8.48V)}^{2}

Next Step Convert Units

∴

I ds = \frac{1}{2} \cdot 0.002S \cdot \frac{1E-5m}{3E-6m} \cdot {(8.48V)}^{2}

Next Step Prepare to Evaluate

∴

I ds = \frac{1}{2} \cdot 0.002 \cdot \frac{1E-5}{3E-6} \cdot {(8.48)}^{2}

Next Step Evaluate

∴

I ds = 0.239701333333333A

Next Step Convert to Output's Unit

∴

I ds = 239.701333333333mA

LAST Step Rounding Answer

∴

I ds = 239.7013mA

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Formula Elements

Variables

Saturation Drain Current

Saturation drain current below threshold voltage is defined as the sub threshold current and varies exponentially with gate to source voltage.

Symbol: I_ds

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Saturation Drain Current

Process Transconductance Parameter in NMOS

The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.

Symbol: k'_n

Measurement: Electric ConductanceUnit: mS

Note: Value can be positive or negative.

Formulas to find Process Transconductance Parameter in NMOS

Width of Channel

The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.

Symbol: W_c

Measurement: LengthUnit: μm

Note: Value can be positive or negative.

Formulas to find Width of Channel

Length of the Channel

Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.

Symbol: L

Measurement: LengthUnit: μm

Note: Value can be positive or negative.

Formulas to find Length of the Channel

Overdrive Voltage in NMOS

Overdrive voltage in NMOS typically refers to the voltage applied to a device or component that exceeds its normal operating voltage.

Symbol: V_ov

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Overdrive Voltage in NMOS

Other formulas in N Channel Enhancement category

Go Electron Drift Velocity of Channel in NMOS Transistor

v d = μ n \cdot E L

Go NMOS as Linear Resistance

r DS = \frac{L}{μ n \cdot C ox \cdot W c \cdot (V gs - V T)}

Go Current Entering Drain Terminal of NMOS given Gate Source Voltage

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {V ds}^{2})

Go Current Entering Drain-Source in Triode Region of NMOS

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {(V ds)}^{2})

How to Evaluate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage evaluator uses Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2 to evaluate the Saturation Drain Current, Current entering drain-source at saturation region of NMOS given effective voltage drain current first increases linearly with applied drain-to-source voltage, but then reaches maximum value. A depletion layer located at drain end of gate accommodates additional drain-to-source voltage. This behavior is referred to as drain current saturation. Saturation Drain Current is denoted by I_ds symbol.

How to evaluate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage using this online evaluator? To use this online evaluator for Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage, enter Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L) & Overdrive Voltage in NMOS (V_ov) and hit the calculate button.

FAQs on Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

What is the formula to find Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

The formula of Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage is expressed as Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2. Here is an example- 239701.3 = 1/2*0.002*1E-05/3E-06*(8.48)^2.

How to calculate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

With Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L) & Overdrive Voltage in NMOS (V_ov) we can find Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage using the formula - Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2.

Can the Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage be negative?

No, the Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage, measured in Electric Current cannot be negative.

Which unit is used to measure Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage can be measured.

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Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Formula

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Example

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Solution

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Formula Elements

Other formulas in N Channel Enhancement category

How to Evaluate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

FAQs on Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

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