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Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Formula

GoCurrent Entering Drain Terminal of NMOS given Gate Source Voltage Formula

GoCurrent Entering Drain-Source in Triode Region of NMOS Formula

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Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). Check FAQs

I d = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V ds)}^{2}

I_d - Drain Current in NMOS?k'_n - Process Transconductance Parameter in NMOS?W_c - Width of Channel?L - Length of the Channel?V_ds - Drain Source Voltage?

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Example

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Here is how the Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS equation looks like with Values.

Here is how the Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS equation looks like with Units.

Here is how the Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS equation looks like.

236.883 = \frac{1}{2} \cdot 2 \cdot \frac{10}{3} \cdot {(8.43)}^{2}

236.883mA = \frac{1}{2} \cdot 2mS \cdot \frac{10μm}{3μm} \cdot {(8.43V)}^{2}

236.883 = \frac{1}{2} \cdot 2 \cdot \frac{10}{3} \cdot {(8.43)}^{2}

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Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Solution

Follow our step by step solution on how to calculate Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS?

FIRST Step Consider the formula

I d = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V ds)}^{2}

Next Step Substitute values of Variables

∴

I d = \frac{1}{2} \cdot 2mS \cdot \frac{10μm}{3μm} \cdot {(8.43V)}^{2}

Next Step Convert Units

∴

I d = \frac{1}{2} \cdot 0.002S \cdot \frac{1E-5m}{3E-6m} \cdot {(8.43V)}^{2}

Next Step Prepare to Evaluate

∴

I d = \frac{1}{2} \cdot 0.002 \cdot \frac{1E-5}{3E-6} \cdot {(8.43)}^{2}

Next Step Evaluate

∴

I d = 0.236883A

LAST Step Convert to Output's Unit

∴

I d = 236.883mA

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Formula Elements

Variables

Drain Current in NMOS

Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).

Symbol: I_d

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Drain Current in NMOS

Process Transconductance Parameter in NMOS

The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.

Symbol: k'_n

Measurement: Electric ConductanceUnit: mS

Note: Value can be positive or negative.

Formulas to find Process Transconductance Parameter in NMOS

Width of Channel

The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.

Symbol: W_c

Measurement: LengthUnit: μm

Note: Value can be positive or negative.

Formulas to find Width of Channel

Length of the Channel

Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.

Symbol: L

Measurement: LengthUnit: μm

Note: Value can be positive or negative.

Formulas to find Length of the Channel

Drain Source Voltage

Drain Source Voltage is an electrical term used in electronics and specifically in field-effect transistors . It refers to the voltage difference between the Drain and Source terminals of the FET.

Symbol: V_ds

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Drain Source Voltage

Other Formulas to find Drain Current in NMOS

Go Current Entering Drain Terminal of NMOS given Gate Source Voltage

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {V ds}^{2})

Go Current Entering Drain-Source in Triode Region of NMOS

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {(V ds)}^{2})

Go Current Entering Drain-Source at Saturation Region of NMOS

I d = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V gs - V T)}^{2}

Go Drain Current when NMOS Operates as Voltage-Controlled Current Source

I d = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V gs - V T)}^{2}

Other formulas in N Channel Enhancement category

Go Electron Drift Velocity of Channel in NMOS Transistor

v d = μ n \cdot E L

Go NMOS as Linear Resistance

r DS = \frac{L}{μ n \cdot C ox \cdot W c \cdot (V gs - V T)}

Go Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

I ds = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V ov)}^{2}

Go Positive Voltage given Channel Length in NMOS

V = V A \cdot L

How to Evaluate Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS?

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS evaluator uses Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2 to evaluate the Drain Current in NMOS, The Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS formula indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices. Drain Current in NMOS is denoted by I_d symbol.

How to evaluate Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS using this online evaluator? To use this online evaluator for Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS, enter Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L) & Drain Source Voltage (V_ds) and hit the calculate button.

FAQs on Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

What is the formula to find Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS?

The formula of Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS is expressed as Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2. Here is an example- 236883 = 1/2*0.002*1E-05/3E-06*(8.43)^2.

How to calculate Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS?

With Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L) & Drain Source Voltage (V_ds) we can find Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS using the formula - Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2.

What are the other ways to Calculate Drain Current in NMOS?

Here are the different ways to Calculate Drain Current in NMOS-

Drain Current in NMOS=Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)
Drain Current in NMOS=Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)
Drain Current in NMOS=1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Can the Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS be negative?

No, the Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS, measured in Electric Current cannot be negative.

Which unit is used to measure Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS?

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS can be measured.

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Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Formula

​GoCurrent Entering Drain Terminal of NMOS given Gate Source Voltage Formula

​GoCurrent Entering Drain-Source in Triode Region of NMOS Formula

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Example

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Solution

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS Formula Elements

Other Formulas to find Drain Current in NMOS

Other formulas in N Channel Enhancement category

How to Evaluate Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS?

FAQs on Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Variable Name

GoCurrent Entering Drain Terminal of NMOS given Gate Source Voltage Formula

GoCurrent Entering Drain-Source in Triode Region of NMOS Formula