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Conductivity of P-Type Formula

GoOhmic Conductivity of Impurity Formula

GoConductivity of N-Type Formula

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Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another. Check FAQs

σ = q \cdot (μ n \cdot (\frac{{n i}^{2}}{N a}) + μ p \cdot N a)

σ - Ohmic Conductivity?q - Charge?μ_n - Electron Doping Silicon Mobility?n_i - Intrinsic Concentration?N_a - Equilibrium Concentration of P-Type?μ_p - Hole Doping Silicon Mobility?

Conductivity of P-Type Example

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Here is how the Conductivity of P-Type equation looks like with Values.

Here is how the Conductivity of P-Type equation looks like with Units.

Here is how the Conductivity of P-Type equation looks like.

0.0857 = 5 \cdot (0.38 \cdot (\frac{{1.32}^{2}}{7.1}) + 2.4 \cdot 7.1)

0.0857mho/cm = 5mC \cdot (0.38cm²/V*s \cdot (\frac{{1.321/cm³}^{2}}{7.11/cm³}) + 2.4cm²/V*s \cdot 7.11/cm³)

0.0857 = 5 \cdot (0.38 \cdot (\frac{{1.32}^{2}}{7.1}) + 2.4 \cdot 7.1)

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Conductivity of P-Type Solution

Follow our step by step solution on how to calculate Conductivity of P-Type?

FIRST Step Consider the formula

σ = q \cdot (μ n \cdot (\frac{{n i}^{2}}{N a}) + μ p \cdot N a)

Next Step Substitute values of Variables

∴

σ = 5mC \cdot (0.38cm²/V*s \cdot (\frac{{1.321/cm³}^{2}}{7.11/cm³}) + 2.4cm²/V*s \cdot 7.11/cm³)

Next Step Convert Units

∴

σ = 0.005C \cdot (3.8E-5m²/V*s \cdot (\frac{{1.3E+61/m³}^{2}}{7.1E+61/m³}) + 0.0002m²/V*s \cdot 7.1E+61/m³)

Next Step Prepare to Evaluate

∴

σ = 0.005 \cdot (3.8E-5 \cdot (\frac{{1.3E+6}^{2}}{7.1E+6}) + 0.0002 \cdot 7.1E+6)

Next Step Evaluate

∴

σ = 8.5666276056338S/m

Next Step Convert to Output's Unit

∴

σ = 0.085666276056338mho/cm

LAST Step Rounding Answer

∴

σ = 0.0857mho/cm

Conductivity of P-Type Formula Elements

Variables

Ohmic Conductivity

Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another.

Symbol: σ

Measurement: Electric ConductivityUnit: mho/cm

Note: Value should be greater than 0.

Formulas to find Ohmic Conductivity

Charge

Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.

Symbol: q

Measurement: Electric ChargeUnit: mC

Note: Value should be greater than 0.

Formulas to find Charge

Electron Doping Silicon Mobility

Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.

Symbol: μ_n

Measurement: MobilityUnit: cm²/V*s

Note: Value should be greater than 0.

Formulas to find Electron Doping Silicon Mobility

Intrinsic Concentration

Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

Symbol: n_i

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Intrinsic Concentration

Equilibrium Concentration of P-Type

Equilibrium Concentration of P-Type electrons are the minority carriers and holes are the majority carriers.

Symbol: N_a

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Equilibrium Concentration of P-Type

Hole Doping Silicon Mobility

Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field.

Symbol: μ_p

Measurement: MobilityUnit: cm²/V*s

Note: Value should be greater than 0.

Formulas to find Hole Doping Silicon Mobility

Other Formulas to find Ohmic Conductivity

Go Ohmic Conductivity of Impurity

σ = q \cdot (μ n \cdot n e + μ p \cdot p)

Go Conductivity of N-Type

σ = q \cdot (μ n \cdot N d + μ p \cdot (\frac{{n i}^{2}}{N d}))

Other formulas in Bipolar IC Fabrication category

Go Impurity with Intrinsic Concentration

n i = \sqrt{\frac{n e \cdot p}{t o}}

Go Breakout Voltage of Collector Emitter

V ce = \frac{V cb}{{(i g)}^{\frac{1}{n}}}

Go Resistance of Diffused Layer

R = (\frac{1}{σ}) \cdot (\frac{L}{W \cdot t})

Go Sheet Resistance of Layer

R s = \frac{1}{q \cdot μ n \cdot N d \cdot t}

How to Evaluate Conductivity of P-Type?

Conductivity of P-Type evaluator uses Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type) to evaluate the Ohmic Conductivity, The Conductivity of P-Type formula is due to the presence of holes. In a P-type semiconductor, the fermi level lies between the acceptor energy level and the valance band. Ohmic Conductivity is denoted by σ symbol.

How to evaluate Conductivity of P-Type using this online evaluator? To use this online evaluator for Conductivity of P-Type, enter Charge (q), Electron Doping Silicon Mobility (μ_n), Intrinsic Concentration (n_i), Equilibrium Concentration of P-Type (N_a) & Hole Doping Silicon Mobility (μ_p) and hit the calculate button.

FAQs on Conductivity of P-Type

What is the formula to find Conductivity of P-Type?

The formula of Conductivity of P-Type is expressed as Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type). Here is an example- 0.000857 = 0.005*(3.8E-05*(1320000^2/7100000)+0.00024*7100000).

How to calculate Conductivity of P-Type?

With Charge (q), Electron Doping Silicon Mobility (μ_n), Intrinsic Concentration (n_i), Equilibrium Concentration of P-Type (N_a) & Hole Doping Silicon Mobility (μ_p) we can find Conductivity of P-Type using the formula - Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type).

What are the other ways to Calculate Ohmic Conductivity?

Here are the different ways to Calculate Ohmic Conductivity-

Ohmic Conductivity=Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)
Ohmic Conductivity=Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Can the Conductivity of P-Type be negative?

No, the Conductivity of P-Type, measured in Electric Conductivity cannot be negative.

Which unit is used to measure Conductivity of P-Type?

Conductivity of P-Type is usually measured using the Mho per Centimeter[mho/cm] for Electric Conductivity. Siemens per Meter[mho/cm], Mho per Meter[mho/cm], Abmho per Meter[mho/cm] are the few other units in which Conductivity of P-Type can be measured.

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Conductivity of P-Type Formula

​GoOhmic Conductivity of Impurity Formula

​GoConductivity of N-Type Formula

Conductivity of P-Type Example

Conductivity of P-Type Solution

Conductivity of P-Type Formula Elements

Other Formulas to find Ohmic Conductivity

Other formulas in Bipolar IC Fabrication category

How to Evaluate Conductivity of P-Type?

FAQs on Conductivity of P-Type

Variable Name

GoOhmic Conductivity of Impurity Formula

GoConductivity of N-Type Formula