Conductance of Channel of MOSFETs Formula

Fx Copy
LaTeX Copy
The conductance of channel is typically defined as the ratio of the current passing through the channel to the voltage across it. Check FAQs
G=μsCox(WcL)Vox
G - Conductance of Channel?μs - Mobility of Electrons at Surface of Channel?Cox - Oxide Capacitance?Wc - Channel Width?L - Channel Length?Vox - Voltage across Oxide?

Conductance of Channel of MOSFETs Example

With values
With units
Only example

Here is how the Conductance of Channel of MOSFETs equation looks like with Values.

Here is how the Conductance of Channel of MOSFETs equation looks like with Units.

Here is how the Conductance of Channel of MOSFETs equation looks like.

19.2888Edit=38Edit940Edit(10Edit100Edit)5.4Edit
You are here -
HomeIcon Home » Category Engineering » Category Electronics » Category Analog Electronics » fx Conductance of Channel of MOSFETs

Conductance of Channel of MOSFETs Solution

Follow our step by step solution on how to calculate Conductance of Channel of MOSFETs?

FIRST Step Consider the formula
G=μsCox(WcL)Vox
Next Step Substitute values of Variables
G=38m²/V*s940μF(10μm100μm)5.4V
Next Step Convert Units
G=38m²/V*s0.0009F(1E-5m0.0001m)5.4V
Next Step Prepare to Evaluate
G=380.0009(1E-50.0001)5.4
Next Step Evaluate
G=0.0192888S
LAST Step Convert to Output's Unit
G=19.2888mS

Conductance of Channel of MOSFETs Formula Elements

Variables
Conductance of Channel
The conductance of channel is typically defined as the ratio of the current passing through the channel to the voltage across it.
Symbol: G
Measurement: Electric ConductanceUnit: mS
Note: Value can be positive or negative.
Mobility of Electrons at Surface of Channel
The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor.
Symbol: μs
Measurement: MobilityUnit: m²/V*s
Note: Value should be greater than 0.
Oxide Capacitance
Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Symbol: Cox
Measurement: CapacitanceUnit: μF
Note: Value should be greater than 0.
Channel Width
Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Symbol: Wc
Measurement: LengthUnit: μm
Note: Value should be greater than 0.
Channel Length
Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).
Symbol: L
Measurement: LengthUnit: μm
Note: Value should be greater than 0.
Voltage across Oxide
Voltage across oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.
Symbol: Vox
Measurement: Electric PotentialUnit: V
Note: Value can be positive or negative.

Other formulas in Internal Capacitive Effects and High Frequency Model category

​Go Gate to Source Channel Width of MOSFET
Wc=CocCoxLov
​Go Overlap Capacitance of MOSFET
Coc=WcCoxLov
​Go Total Capacitance between Gate and Channel of MOSFETs
Cg=CoxWcL
​Go Transition Frequency of MOSFET
ft=gm2π(Csg+Cgd)

How to Evaluate Conductance of Channel of MOSFETs?

Conductance of Channel of MOSFETs evaluator uses Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide to evaluate the Conductance of Channel, The conductance of channel of MOSFETs, defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system. Conductance of Channel is denoted by G symbol.

How to evaluate Conductance of Channel of MOSFETs using this online evaluator? To use this online evaluator for Conductance of Channel of MOSFETs, enter Mobility of Electrons at Surface of Channel s), Oxide Capacitance (Cox), Channel Width (Wc), Channel Length (L) & Voltage across Oxide (Vox) and hit the calculate button.

FAQs on Conductance of Channel of MOSFETs

What is the formula to find Conductance of Channel of MOSFETs?
The formula of Conductance of Channel of MOSFETs is expressed as Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide. Here is an example- 19288.8 = 38*0.00094*(1E-05/0.0001)*5.4.
How to calculate Conductance of Channel of MOSFETs?
With Mobility of Electrons at Surface of Channel s), Oxide Capacitance (Cox), Channel Width (Wc), Channel Length (L) & Voltage across Oxide (Vox) we can find Conductance of Channel of MOSFETs using the formula - Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide.
Can the Conductance of Channel of MOSFETs be negative?
Yes, the Conductance of Channel of MOSFETs, measured in Electric Conductance can be negative.
Which unit is used to measure Conductance of Channel of MOSFETs?
Conductance of Channel of MOSFETs is usually measured using the Millisiemens[mS] for Electric Conductance. Siemens[mS], Megasiemens[mS], Mho[mS] are the few other units in which Conductance of Channel of MOSFETs can be measured.
Copied!