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Bulk Depletion Region Charge Density VLSI Formula

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Bulk Depletion Region Charge Density is defined as electric charge per unit area associated with the depletion region in the bulk of a semiconductor device. Check FAQs

Q B0 = - (1 - (\frac{ΔL s + ΔL D}{2 \cdot L})) \cdot \sqrt{2 \cdot [Charge-e] \cdot [Permitivity-silicon] \cdot [Permitivity-vacuum] \cdot N A \cdot | 2 \cdot Φ s |}

Q_B0 - Bulk Depletion Region Charge Density?ΔL_s - Lateral Extent of Depletion Region with Source?ΔL_D - Lateral Extent of Depletion Region with Drain?L - Channel Length?N_A - Acceptor Concentration?Φ_s - Surface Potential?[Charge-e] - Charge of electron?[Permitivity-silicon] - Permittivity of silicon?[Permitivity-vacuum] - Permittivity of vacuum?

Bulk Depletion Region Charge Density VLSI Example

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Here is how the Bulk Depletion Region Charge Density VLSI equation looks like with Values.

Here is how the Bulk Depletion Region Charge Density VLSI equation looks like with Units.

Here is how the Bulk Depletion Region Charge Density VLSI equation looks like.

-0.2006 = - (1 - (\frac{0.1 + 0.2}{2 \cdot 2.5})) \cdot \sqrt{2 \cdot 1.6E-19 \cdot 11.7 \cdot 8.9E-12 \cdot 1E+16 \cdot | 2 \cdot 6.86 |}

-0.2006μC/cm² = - (1 - (\frac{0.1μm + 0.2μm}{2 \cdot 2.5μm})) \cdot \sqrt{2 \cdot 1.6E-19C \cdot 11.7 \cdot 8.9E-12F/m \cdot 1E+161/cm³ \cdot | 2 \cdot 6.86V |}

-0.2006 = - (1 - (\frac{0.1 + 0.2}{2 \cdot 2.5})) \cdot \sqrt{2 \cdot 1.6E-19 \cdot 11.7 \cdot 8.9E-12 \cdot 1E+16 \cdot | 2 \cdot 6.86 |}

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Bulk Depletion Region Charge Density VLSI Solution

Follow our step by step solution on how to calculate Bulk Depletion Region Charge Density VLSI?

FIRST Step Consider the formula

Q B0 = - (1 - (\frac{ΔL s + ΔL D}{2 \cdot L})) \cdot \sqrt{2 \cdot [Charge-e] \cdot [Permitivity-silicon] \cdot [Permitivity-vacuum] \cdot N A \cdot | 2 \cdot Φ s |}

Next Step Substitute values of Variables

∴

Q B0 = - (1 - (\frac{0.1μm + 0.2μm}{2 \cdot 2.5μm})) \cdot \sqrt{2 \cdot [Charge-e] \cdot [Permitivity-silicon] \cdot [Permitivity-vacuum] \cdot 1E+161/cm³ \cdot | 2 \cdot 6.86V |}

Next Step Substitute values of Constants

∴

Q B0 = - (1 - (\frac{0.1μm + 0.2μm}{2 \cdot 2.5μm})) \cdot \sqrt{2 \cdot 1.6E-19C \cdot 11.7 \cdot 8.9E-12F/m \cdot 1E+161/cm³ \cdot | 2 \cdot 6.86V |}

Next Step Convert Units

∴

Q B0 = - (1 - (\frac{1E-7m + 2E-7m}{2 \cdot 2.5E-6m})) \cdot \sqrt{2 \cdot 1.6E-19C \cdot 11.7 \cdot 8.9E-12F/m \cdot 1E+221/m³ \cdot | 2 \cdot 6.86V |}

Next Step Prepare to Evaluate

∴

Q B0 = - (1 - (\frac{1E-7 + 2E-7}{2 \cdot 2.5E-6})) \cdot \sqrt{2 \cdot 1.6E-19 \cdot 11.7 \cdot 8.9E-12 \cdot 1E+22 \cdot | 2 \cdot 6.86 |}

Next Step Evaluate

∴

Q B0 = -0.00200557851391776C/m²

Next Step Convert to Output's Unit

∴

Q B0 = -0.200557851391776μC/cm²

LAST Step Rounding Answer

∴

Q B0 = -0.2006μC/cm²

Bulk Depletion Region Charge Density VLSI Formula Elements

Variables

Constants

Functions

Bulk Depletion Region Charge Density

Bulk Depletion Region Charge Density is defined as electric charge per unit area associated with the depletion region in the bulk of a semiconductor device.

Symbol: Q_B0

Measurement: Surface Charge DensityUnit: μC/cm²

Note: Value can be positive or negative.

Formulas to find Bulk Depletion Region Charge Density

Lateral Extent of Depletion Region with Source

Lateral Extent of Depletion Region with Source the horizontal distance across which the depletion region extends laterally from the source terminal in a semiconductor device.

Symbol: ΔL_s

Measurement: LengthUnit: μm