FormulaDen.com

Physics Chemistry Math Chemical Engineering Civil Electrical Electronics Electronics and Instrumentation Materials Science Mechanical Production Engineering Financial Health

Body Effect in PMOS Formula

Fx Copy

LaTeX Copy

Change in Threshold Voltage can be caused by various factors, including changes in temperature, radiation exposure, and aging. Check FAQs

ΔV t = V T + γ \cdot (\sqrt{2 \cdot φ f + V SB} - \sqrt{2 \cdot φ f})

ΔV_t - Change in Threshold Voltage?V_T - Threshold Voltage?γ - Fabrication Process Parameter?φ_f - Physical Parameter?V_SB - Voltage between Body and Source?

Body Effect in PMOS Example

With values

With units

Only example

Here is how the Body Effect in PMOS equation looks like with Values.

Here is how the Body Effect in PMOS equation looks like with Units.

Here is how the Body Effect in PMOS equation looks like.

1.6005 = 0.7 + 0.4 \cdot (\sqrt{2 \cdot 0.6 + 10} - \sqrt{2 \cdot 0.6})

1.6005V = 0.7V + 0.4 \cdot (\sqrt{2 \cdot 0.6V + 10V} - \sqrt{2 \cdot 0.6V})

1.6005 = 0.7 + 0.4 \cdot (\sqrt{2 \cdot 0.6 + 10} - \sqrt{2 \cdot 0.6})

Tip: Use pencil ( Pencil

) icon above to edit Input Values and Units.

Calculate

Recalculate

Solution

Copy

Reset

You are here -

Home » Category

Engineering » Category

Electronics » Category

Analog Electronics » fx Body Effect in PMOS

Body Effect in PMOS Solution

Follow our step by step solution on how to calculate Body Effect in PMOS?

FIRST Step Consider the formula

ΔV t = V T + γ \cdot (\sqrt{2 \cdot φ f + V SB} - \sqrt{2 \cdot φ f})

Next Step Substitute values of Variables

∴

ΔV t = 0.7V + 0.4 \cdot (\sqrt{2 \cdot 0.6V + 10V} - \sqrt{2 \cdot 0.6V})

Next Step Prepare to Evaluate

∴

ΔV t = 0.7 + 0.4 \cdot (\sqrt{2 \cdot 0.6 + 10} - \sqrt{2 \cdot 0.6})

Next Step Evaluate

∴

ΔV t = 1.60047799645039V

LAST Step Rounding Answer

∴

ΔV t = 1.6005V

Body Effect in PMOS Formula Elements

Variables

Functions

Change in Threshold Voltage

Change in Threshold Voltage can be caused by various factors, including changes in temperature, radiation exposure, and aging.

Symbol: ΔV_t

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Change in Threshold Voltage

Threshold Voltage

Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

Symbol: V_T

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Threshold Voltage

Fabrication Process Parameter

The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface.

Symbol: γ

Measurement: NAUnit: Unitless

Note: Value can be positive or negative.

Formulas to find Fabrication Process Parameter

Physical Parameter

Physical parameters can be used to describe the state or condition of a physical system, or to characterize the way in which the system responds to various stimuli or inputs.

Symbol: φ_f

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Physical Parameter

Voltage between Body and Source

The voltage between body and source is important because it can have an effect on the safe operation of electronic devices.

Symbol: V_SB

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Voltage between Body and Source

sqrt

A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.

Syntax: sqrt(Number)

Other formulas in P Channel Enhancement category

Go Drain Current in Triode Region of PMOS Transistor

I d = k' p \cdot WL \cdot ((V GS - mod \underset{̲}{u} s (V T)) \cdot V DS - \frac{1}{2} \cdot {(V DS)}^{2})

Go Drain Current in Triode Region of PMOS Transistor given Vsd

I d = k' p \cdot WL \cdot (mod \underset{̲}{u} s (V ov) - \frac{1}{2} \cdot V DS) \cdot V DS

Go Drain Current in Saturation Region of PMOS Transistor

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2}

Go Drain Current in Saturation Region of PMOS Transistor given Vov

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V ov)}^{2}

How to Evaluate Body Effect in PMOS?

Body Effect in PMOS evaluator uses Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)) to evaluate the Change in Threshold Voltage, The Body effect in PMOS refers to the change in the transistor threshold voltage (V _T) resulting from a voltage difference between the transistor source and body. Change in Threshold Voltage is denoted by ΔV_t symbol.

How to evaluate Body Effect in PMOS using this online evaluator? To use this online evaluator for Body Effect in PMOS, enter Threshold Voltage (V_T), Fabrication Process Parameter (γ), Physical Parameter (φ_f) & Voltage between Body and Source (V_SB) and hit the calculate button.

FAQs on Body Effect in PMOS

What is the formula to find Body Effect in PMOS?

The formula of Body Effect in PMOS is expressed as Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)). Here is an example- 1.600478 = 0.7+0.4*(sqrt(2*0.6+10)-sqrt(2*0.6)).

How to calculate Body Effect in PMOS?

With Threshold Voltage (V_T), Fabrication Process Parameter (γ), Physical Parameter (φ_f) & Voltage between Body and Source (V_SB) we can find Body Effect in PMOS using the formula - Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)). This formula also uses Square Root (sqrt) function(s).

Can the Body Effect in PMOS be negative?

No, the Body Effect in PMOS, measured in Electric Potential cannot be negative.

Which unit is used to measure Body Effect in PMOS?

Body Effect in PMOS is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Body Effect in PMOS can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!

: Value
: Unit

Body Effect in PMOS Formula

Body Effect in PMOS Example

Body Effect in PMOS Solution

Body Effect in PMOS Formula Elements

Other formulas in P Channel Enhancement category

How to Evaluate Body Effect in PMOS?

FAQs on Body Effect in PMOS

Variable Name