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Body Effect in NMOS Formula

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Change in Threshold Voltage can be caused by various factors, including changes in temperature, radiation exposure, and aging. Check FAQs

ΔV th = V T + γ \cdot (\sqrt{2 \cdot φ f + V SB} - \sqrt{2 \cdot φ f})

ΔV_th - Change in Threshold Voltage?V_T - Threshold Voltage?γ - Fabrication Process Parameter?φ_f - Physical Parameter?V_SB - Voltage between Body and Source?

Body Effect in NMOS Example

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Here is how the Body Effect in NMOS equation looks like with Values.

Here is how the Body Effect in NMOS equation looks like with Units.

Here is how the Body Effect in NMOS equation looks like.

37.2244 = 1.82 + 204 \cdot (\sqrt{2 \cdot 13 + 1.8} - \sqrt{2 \cdot 13})

37.2244V = 1.82V + 204 \cdot (\sqrt{2 \cdot 13V + 1.8V} - \sqrt{2 \cdot 13V})

37.2244 = 1.82 + 204 \cdot (\sqrt{2 \cdot 13 + 1.8} - \sqrt{2 \cdot 13})

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Body Effect in NMOS Solution

Follow our step by step solution on how to calculate Body Effect in NMOS?

FIRST Step Consider the formula

ΔV th = V T + γ \cdot (\sqrt{2 \cdot φ f + V SB} - \sqrt{2 \cdot φ f})

Next Step Substitute values of Variables

∴

ΔV th = 1.82V + 204 \cdot (\sqrt{2 \cdot 13V + 1.8V} - \sqrt{2 \cdot 13V})

Next Step Prepare to Evaluate

∴

ΔV th = 1.82 + 204 \cdot (\sqrt{2 \cdot 13 + 1.8} - \sqrt{2 \cdot 13})

Next Step Evaluate

∴

ΔV th = 37.2244074665399V

LAST Step Rounding Answer

∴

ΔV th = 37.2244V

Body Effect in NMOS Formula Elements

Variables

Functions

Change in Threshold Voltage

Change in Threshold Voltage can be caused by various factors, including changes in temperature, radiation exposure, and aging.

Symbol: ΔV_th

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Change in Threshold Voltage

Threshold Voltage

Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

Symbol: V_T

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Threshold Voltage

Fabrication Process Parameter

The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface.

Symbol: γ

Measurement: NAUnit: Unitless

Note: Value can be positive or negative.

Formulas to find Fabrication Process Parameter

Physical Parameter

Physical parameters can be used to describe the state or condition of a physical system, or to characterize the way in which the system responds to various stimuli or inputs.

Symbol: φ_f

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Physical Parameter

Voltage between Body and Source

The voltage between body and source is important because it can have an effect on the safe operation of electronic devices.

Symbol: V_SB

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Voltage between Body and Source

sqrt

A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.

Syntax: sqrt(Number)

Other formulas in N Channel Enhancement category

Go Electron Drift Velocity of Channel in NMOS Transistor

v d = μ n \cdot E L

Go NMOS as Linear Resistance

r DS = \frac{L}{μ n \cdot C ox \cdot W c \cdot (V gs - V T)}

Go Current Entering Drain Terminal of NMOS given Gate Source Voltage

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {V ds}^{2})

Go Current Entering Drain-Source in Triode Region of NMOS

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {(V ds)}^{2})

How to Evaluate Body Effect in NMOS?

Body Effect in NMOS evaluator uses Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)) to evaluate the Change in Threshold Voltage, The body effect in NMOS refers to the change in the transistor threshold voltage resulting from a voltage difference between the transistor source and body. Change in Threshold Voltage is denoted by ΔV_th symbol.

How to evaluate Body Effect in NMOS using this online evaluator? To use this online evaluator for Body Effect in NMOS, enter Threshold Voltage (V_T), Fabrication Process Parameter (γ), Physical Parameter (φ_f) & Voltage between Body and Source (V_SB) and hit the calculate button.

FAQs on Body Effect in NMOS

What is the formula to find Body Effect in NMOS?

The formula of Body Effect in NMOS is expressed as Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)). Here is an example- 37.22441 = 1.82+204*(sqrt(2*13+1.8)-sqrt(2*13)).

How to calculate Body Effect in NMOS?

With Threshold Voltage (V_T), Fabrication Process Parameter (γ), Physical Parameter (φ_f) & Voltage between Body and Source (V_SB) we can find Body Effect in NMOS using the formula - Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter)). This formula also uses Square Root (sqrt) function(s).

Can the Body Effect in NMOS be negative?

Yes, the Body Effect in NMOS, measured in Electric Potential can be negative.

Which unit is used to measure Body Effect in NMOS?

Body Effect in NMOS is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Body Effect in NMOS can be measured.

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Body Effect in NMOS Formula

Body Effect in NMOS Example

Body Effect in NMOS Solution

Body Effect in NMOS Formula Elements

Other formulas in N Channel Enhancement category

How to Evaluate Body Effect in NMOS?

FAQs on Body Effect in NMOS

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