Body Effect in MOSFET Formula

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Threshold Voltage with Substrate is a crucial parameter that defines the point at which the transistor begins to conduct current from the source to the drain. Check FAQs
Vt=Vth+γ(2Φf+Vbs-2Φf)
Vt - Threshold Voltage with Substrate?Vth - Threshold Voltage with Zero Body Bias?γ - Body Effect Parameter?Φf - Bulk Fermi Potential?Vbs - Voltage Applied to Body?

Body Effect in MOSFET Example

With values
With units
Only example

Here is how the Body Effect in MOSFET equation looks like with Values.

Here is how the Body Effect in MOSFET equation looks like with Units.

Here is how the Body Effect in MOSFET equation looks like.

3.9626Edit=3.4Edit+0.56Edit(20.25Edit+2.43Edit-20.25Edit)
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Body Effect in MOSFET Solution

Follow our step by step solution on how to calculate Body Effect in MOSFET?

FIRST Step Consider the formula
Vt=Vth+γ(2Φf+Vbs-2Φf)
Next Step Substitute values of Variables
Vt=3.4V+0.56(20.25V+2.43V-20.25V)
Next Step Prepare to Evaluate
Vt=3.4+0.56(20.25+2.43-20.25)
Next Step Evaluate
Vt=3.96258579757846V
LAST Step Rounding Answer
Vt=3.9626V

Body Effect in MOSFET Formula Elements

Variables
Functions
Threshold Voltage with Substrate
Threshold Voltage with Substrate is a crucial parameter that defines the point at which the transistor begins to conduct current from the source to the drain.
Symbol: Vt
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Threshold Voltage with Zero Body Bias
Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal).
Symbol: Vth
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Body Effect Parameter
Body Effect Parameter is a parameter that characterizes the sensitivity of the threshold voltage of MOSFET.
Symbol: γ
Measurement: NAUnit: Unitless
Note: Value should be greater than 0.
Bulk Fermi Potential
Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.
Symbol: Φf
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Voltage Applied to Body
Voltage Applied to Body is the voltage applied to the body terminal. This voltage can have a significant impact on the behavior and performance of the MOSFET.
Symbol: Vbs
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
sqrt
A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.
Syntax: sqrt(Number)

Other formulas in MOS IC Fabrication category

​Go MOSFET Unity-Gain Frequency
ft=gmCgs+Cgd
​Go Drain Current of MOSFET at Saturation Region
Id=β2(Vgs-Vth)2(1+λiVds)
​Go Channel Resistance
Rch=LtWt1μnQon
​Go Propagation Time
Tp=0.7N(N+12)RmCl

How to Evaluate Body Effect in MOSFET?

Body Effect in MOSFET evaluator uses Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential)) to evaluate the Threshold Voltage with Substrate, The Body Effect in MOSFET is defined as the phenomena that describes how the voltage applied to the semiconductor substrate (body) affects the behavior of the transistor. The body effect occurs due to the change in the threshold voltage of the MOSFET when the voltage between the source and the substrate is varied. Threshold Voltage with Substrate is denoted by Vt symbol.

How to evaluate Body Effect in MOSFET using this online evaluator? To use this online evaluator for Body Effect in MOSFET, enter Threshold Voltage with Zero Body Bias (Vth), Body Effect Parameter (γ), Bulk Fermi Potential f) & Voltage Applied to Body (Vbs) and hit the calculate button.

FAQs on Body Effect in MOSFET

What is the formula to find Body Effect in MOSFET?
The formula of Body Effect in MOSFET is expressed as Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential)). Here is an example- 3.962586 = 3.4+0.56*(sqrt(2*0.25+2.43)-sqrt(2*0.25)).
How to calculate Body Effect in MOSFET?
With Threshold Voltage with Zero Body Bias (Vth), Body Effect Parameter (γ), Bulk Fermi Potential f) & Voltage Applied to Body (Vbs) we can find Body Effect in MOSFET using the formula - Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential)). This formula also uses Square Root Function function(s).
Can the Body Effect in MOSFET be negative?
No, the Body Effect in MOSFET, measured in Electric Potential cannot be negative.
Which unit is used to measure Body Effect in MOSFET?
Body Effect in MOSFET is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Body Effect in MOSFET can be measured.
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