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Backgate Effect Parameter in PMOS Formula

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Backgate effect parameter refers to a phenomenon that occurs in field-effect transistors, which are electronic devices used for amplification, switching, and other purposes. Check FAQs

γ p = \frac{\sqrt{2 \cdot [Permitivity-vacuum] \cdot [Charge-e] \cdot N d}}{C ox}

γ_p - Backgate Effect Parameter?N_d - Donor Concentration?C_ox - Oxide Capacitance?[Permitivity-vacuum] - Permittivity of vacuum?[Charge-e] - Charge of electron?

Backgate Effect Parameter in PMOS Example

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Here is how the Backgate Effect Parameter in PMOS equation looks like with Values.

Here is how the Backgate Effect Parameter in PMOS equation looks like with Units.

Here is how the Backgate Effect Parameter in PMOS equation looks like.

0.029 = \frac{\sqrt{2 \cdot 8.9E-12 \cdot 1.6E-19 \cdot 1.9E+20}}{0.0008}

0.029 = \frac{\sqrt{2 \cdot 8.9E-12F/m \cdot 1.6E-19C \cdot 1.9E+201/m³}}{0.0008F}

0.029 = \frac{\sqrt{2 \cdot 8.9E-12 \cdot 1.6E-19 \cdot 1.9E+20}}{0.0008}

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Backgate Effect Parameter in PMOS Solution

Follow our step by step solution on how to calculate Backgate Effect Parameter in PMOS?

FIRST Step Consider the formula

γ p = \frac{\sqrt{2 \cdot [Permitivity-vacuum] \cdot [Charge-e] \cdot N d}}{C ox}

Next Step Substitute values of Variables

∴

γ p = \frac{\sqrt{2 \cdot [Permitivity-vacuum] \cdot [Charge-e] \cdot 1.9E+201/m³}}{0.0008F}

Next Step Substitute values of Constants

∴

γ p = \frac{\sqrt{2 \cdot 8.9E-12F/m \cdot 1.6E-19C \cdot 1.9E+201/m³}}{0.0008F}

Next Step Prepare to Evaluate

∴

γ p = \frac{\sqrt{2 \cdot 8.9E-12 \cdot 1.6E-19 \cdot 1.9E+20}}{0.0008}

Next Step Evaluate

∴

γ p = 0.0290154053183929

LAST Step Rounding Answer

∴

γ p = 0.029

Backgate Effect Parameter in PMOS Formula Elements

Variables

Constants

Functions

Backgate Effect Parameter

Backgate effect parameter refers to a phenomenon that occurs in field-effect transistors, which are electronic devices used for amplification, switching, and other purposes.

Symbol: γ_p

Measurement: NAUnit: Unitless

Note: Value can be positive or negative.

Formulas to find Backgate Effect Parameter

Donor Concentration

Donor concentration is semiconductor physics and refers to the number of donor impurity atoms per unit volume of a semiconductor material.

Symbol: N_d

Measurement: Carrier ConcentrationUnit: 1/m³

Note: Value can be positive or negative.

Formulas to find Donor Concentration

Oxide Capacitance

Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

Symbol: C_ox

Measurement: CapacitanceUnit: F

Note: Value can be positive or negative.

Formulas to find Oxide Capacitance

Permittivity of vacuum

Permittivity of vacuum is a fundamental physical constant that describes the ability of a vacuum to permit the transmission of electric field lines.

Symbol: [Permitivity-vacuum]

Value: 8.85E-12 F/m

Charge of electron

Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.

Symbol: [Charge-e]

Value: 1.60217662E-19 C

sqrt

A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.

Syntax: sqrt(Number)

Other formulas in P Channel Enhancement category

Go Drain Current in Triode Region of PMOS Transistor

I d = k' p \cdot WL \cdot ((V GS - mod \underset{̲}{u} s (V T)) \cdot V DS - \frac{1}{2} \cdot {(V DS)}^{2})

Go Drain Current in Triode Region of PMOS Transistor given Vsd

I d = k' p \cdot WL \cdot (mod \underset{̲}{u} s (V ov) - \frac{1}{2} \cdot V DS) \cdot V DS

Go Drain Current in Saturation Region of PMOS Transistor

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2}

Go Drain Current in Saturation Region of PMOS Transistor given Vov

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V ov)}^{2}

How to Evaluate Backgate Effect Parameter in PMOS?

Backgate Effect Parameter in PMOS evaluator uses Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance to evaluate the Backgate Effect Parameter, The Backgate Effect Parameter in PMOS formula represents the change in threshold voltage for a given change in back-gate voltage. Backgate Effect Parameter is denoted by γ_p symbol.

How to evaluate Backgate Effect Parameter in PMOS using this online evaluator? To use this online evaluator for Backgate Effect Parameter in PMOS, enter Donor Concentration (N_d) & Oxide Capacitance (C_ox) and hit the calculate button.

FAQs on Backgate Effect Parameter in PMOS

What is the formula to find Backgate Effect Parameter in PMOS?

The formula of Backgate Effect Parameter in PMOS is expressed as Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance. Here is an example- 0.029015 = sqrt(2*[Permitivity-vacuum]*[Charge-e]*1.9E+20)/0.0008.

How to calculate Backgate Effect Parameter in PMOS?

With Donor Concentration (N_d) & Oxide Capacitance (C_ox) we can find Backgate Effect Parameter in PMOS using the formula - Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance. This formula also uses Permittivity of vacuum, Charge of electron constant(s) and Square Root (sqrt) function(s).

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Backgate Effect Parameter in PMOS Formula

Backgate Effect Parameter in PMOS Example

Backgate Effect Parameter in PMOS Solution

Backgate Effect Parameter in PMOS Formula Elements

Other formulas in P Channel Enhancement category

How to Evaluate Backgate Effect Parameter in PMOS?

FAQs on Backgate Effect Parameter in PMOS

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