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Acceptor Dopant Concentration Formula

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Acceptor Dopant Concentration is the mobility of charge carriers (holes in this case), and the dimensions of the semiconductor device. Check FAQs

N a = \frac{1}{2 \cdot π \cdot L t \cdot W t \cdot [Charge-e] \cdot μ p \cdot C dep}

N_a - Acceptor Dopant Concentration?L_t - Transistor's Length?W_t - Transistor's Width?μ_p - Hole Mobility?C_dep - Depletion Layer Capacitance?[Charge-e] - Charge of electron?π - Archimedes' constant?

Acceptor Dopant Concentration Example

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Here is how the Acceptor Dopant Concentration equation looks like with Values.

Here is how the Acceptor Dopant Concentration equation looks like with Units.

Here is how the Acceptor Dopant Concentration equation looks like.

1E+32 = \frac{1}{2 \cdot 3.1416 \cdot 3.2 \cdot 5.5 \cdot 1.6E-19 \cdot 400 \cdot 1.4}

1E+32electrons/m³ = \frac{1}{2 \cdot 3.1416 \cdot 3.2μm \cdot 5.5μm \cdot 1.6E-19C \cdot 400m²/V*s \cdot 1.4μF}

1E+32 = \frac{1}{2 \cdot 3.1416 \cdot 3.2 \cdot 5.5 \cdot 1.6E-19 \cdot 400 \cdot 1.4}

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Acceptor Dopant Concentration Solution

Follow our step by step solution on how to calculate Acceptor Dopant Concentration?

FIRST Step Consider the formula

N a = \frac{1}{2 \cdot π \cdot L t \cdot W t \cdot [Charge-e] \cdot μ p \cdot C dep}

Next Step Substitute values of Variables

∴

N a = \frac{1}{2 \cdot π \cdot 3.2μm \cdot 5.5μm \cdot [Charge-e] \cdot 400m²/V*s \cdot 1.4μF}

Next Step Substitute values of Constants

∴

N a = \frac{1}{2 \cdot 3.1416 \cdot 3.2μm \cdot 5.5μm \cdot 1.6E-19C \cdot 400m²/V*s \cdot 1.4μF}

Next Step Convert Units

∴

N a = \frac{1}{2 \cdot 3.1416 \cdot 3.2E-6m \cdot 5.5E-6m \cdot 1.6E-19C \cdot 400m²/V*s \cdot 1.4E-6F}

Next Step Prepare to Evaluate

∴

N a = \frac{1}{2 \cdot 3.1416 \cdot 3.2E-6 \cdot 5.5E-6 \cdot 1.6E-19 \cdot 400 \cdot 1.4E-6}

Next Step Evaluate

∴

N a = 1.00788050957133E+32electrons/m³

LAST Step Rounding Answer

∴

N a = 1E+32electrons/m³

Acceptor Dopant Concentration Formula Elements

Variables

Constants

Acceptor Dopant Concentration

Acceptor Dopant Concentration is the mobility of charge carriers (holes in this case), and the dimensions of the semiconductor device.

Symbol: N_a

Measurement: Electron DensityUnit: electrons/m³

Note: Value should be greater than 0.

Formulas to find Acceptor Dopant Concentration

Transistor's Length

Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.

Symbol: L_t

Measurement: LengthUnit: μm

Note: Value should be greater than 0.

Formulas to find Transistor's Length

Transistor's Width

Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.

Symbol: W_t

Measurement: LengthUnit: μm

Note: Value should be greater than 0.

Formulas to find Transistor's Width

Hole Mobility

Hole Mobility represents the ability of these charge carriers to move in response to an electric field.

Symbol: μ_p

Measurement: MobilityUnit: m²/V*s

Note: Value should be greater than 0.

Formulas to find Hole Mobility

Depletion Layer Capacitance

Depletion Layer Capacitance per Unit Area is the capacitance of depletion layer per unit area.

Symbol: C_dep

Measurement: CapacitanceUnit: μF

Note: Value can be positive or negative.

Formulas to find Depletion Layer Capacitance

Charge of electron

Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.

Symbol: [Charge-e]

Value: 1.60217662E-19 C

Archimedes' constant

Archimedes' constant is a mathematical constant that represents the ratio of the circumference of a circle to its diameter.

Symbol: π

Value: 3.14159265358979323846264338327950288

Other formulas in MOS IC Fabrication category

Go Body Effect in MOSFET

V t = V th + γ \cdot (\sqrt{2 \cdot Φ f + V bs} - \sqrt{2 \cdot Φ f})

Go MOSFET Unity-Gain Frequency

f t = \frac{g m}{C gs + C gd}

Go Drain Current of MOSFET at Saturation Region

I d = \frac{β}{2} \cdot {(V gs - V th)}^{2} \cdot (1 + λ i \cdot V ds)

Go Channel Resistance

R ch = \frac{L t}{W t} \cdot \frac{1}{μ n \cdot Q on}

How to Evaluate Acceptor Dopant Concentration?

Acceptor Dopant Concentration evaluator uses Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance) to evaluate the Acceptor Dopant Concentration, The Acceptor Dopant Concentration formula is defined as the concentration of acceptor atoms per unit volume. It refers to the concentration of dopant atoms intentionally added to a semiconductor material to create an excess of positively charged "holes" in the crystal lattice. Acceptor Dopant Concentration is denoted by N_a symbol.

How to evaluate Acceptor Dopant Concentration using this online evaluator? To use this online evaluator for Acceptor Dopant Concentration, enter Transistor's Length (L_t), Transistor's Width (W_t), Hole Mobility (μ_p) & Depletion Layer Capacitance (C_dep) and hit the calculate button.

FAQs on Acceptor Dopant Concentration

What is the formula to find Acceptor Dopant Concentration?

The formula of Acceptor Dopant Concentration is expressed as Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance). Here is an example- 1E+32 = 1/(2*pi*3.2E-06*5.5E-06*[Charge-e]*400*1.4E-06).

How to calculate Acceptor Dopant Concentration?

With Transistor's Length (L_t), Transistor's Width (W_t), Hole Mobility (μ_p) & Depletion Layer Capacitance (C_dep) we can find Acceptor Dopant Concentration using the formula - Acceptor Dopant Concentration = 1/(2*pi*Transistor's Length*Transistor's Width*[Charge-e]*Hole Mobility*Depletion Layer Capacitance). This formula also uses Charge of electron, Archimedes' constant .

Can the Acceptor Dopant Concentration be negative?

No, the Acceptor Dopant Concentration, measured in Electron Density cannot be negative.

Which unit is used to measure Acceptor Dopant Concentration?

Acceptor Dopant Concentration is usually measured using the Electrons per Cubic Meter[electrons/m³] for Electron Density. Electrons per Cubic Centimeter[electrons/m³] are the few other units in which Acceptor Dopant Concentration can be measured.

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Acceptor Dopant Concentration Formula

Acceptor Dopant Concentration Example

Acceptor Dopant Concentration Solution

Acceptor Dopant Concentration Formula Elements

Other formulas in MOS IC Fabrication category

How to Evaluate Acceptor Dopant Concentration?

FAQs on Acceptor Dopant Concentration

Variable Name