Voltage between Gate and Source in MOSFET Formulas

The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET. And is denoted by V_GS. Voltage between Gate and Source is usually measured using the Volt for Electric Potential. Note that the value of Voltage between Gate and Source is always negative.

MOSFET formulas that make use of Voltage between Gate and Source

fxDrain Current in Triode Region of PMOS TransistorGo

fxDrain Current in Saturation Region of PMOS TransistorGo

fxOverall Drain Current of PMOS TransistorGo

fxInversion Layer Charge in PMOSGo

fxInversion Layer Charge at Pinch-Off Condition in PMOSGo

fxOverdrive Voltage of PMOSGo

FAQ

What is the Voltage between Gate and Source?

The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET. Voltage between Gate and Source is usually measured using the Volt for Electric Potential. Note that the value of Voltage between Gate and Source is always negative.

Can the Voltage between Gate and Source be negative?

Yes, the Voltage between Gate and Source, measured in Electric Potential can be negative.

What unit is used to measure Voltage between Gate and Source?

Voltage between Gate and Source is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Voltage between Gate and Source can be measured.

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