Voltage between Drain and Source in MOSFET Formulas

The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS. And is denoted by V_DS. Voltage between Drain and Source is usually measured using the Volt for Electric Potential. Note that the value of Voltage between Drain and Source is always negative.

MOSFET formulas that make use of Voltage between Drain and Source

fxDrain Current in Triode Region of PMOS TransistorGo

fxDrain Current in Triode Region of PMOS Transistor given VsdGo

fxOverall Drain Current of PMOS TransistorGo

fxInversion Layer Charge at Pinch-Off Condition in PMOSGo

FAQ

What is the Voltage between Drain and Source?

The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS. Voltage between Drain and Source is usually measured using the Volt for Electric Potential. Note that the value of Voltage between Drain and Source is always negative.

Can the Voltage between Drain and Source be negative?

Yes, the Voltage between Drain and Source, measured in Electric Potential can be negative.

What unit is used to measure Voltage between Drain and Source?

Voltage between Drain and Source is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Voltage between Drain and Source can be measured.

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