Voltage across Base Emitter Junction in Transistor Amplifiers Formulas

The Voltage across Base Emitter Junction is the forward voltage between the base and emitter of the transistor. And is denoted by V_be. Voltage across Base Emitter Junction is usually measured using the Volt for Electric Potential. Note that the value of Voltage across Base Emitter Junction is always positive.

Transistor Amplifiers formulas that make use of Voltage across Base Emitter Junction

fxSaturation Current of Emitter FollowerGo

fxCollector Current in Active Region when Transistor Acts as AmplifierGo

FAQ

What is the Voltage across Base Emitter Junction?

The Voltage across Base Emitter Junction is the forward voltage between the base and emitter of the transistor. Voltage across Base Emitter Junction is usually measured using the Volt for Electric Potential. Note that the value of Voltage across Base Emitter Junction is always positive.

Can the Voltage across Base Emitter Junction be negative?

No, the Voltage across Base Emitter Junction, measured in Electric Potential cannot be negative.

What unit is used to measure Voltage across Base Emitter Junction?

Voltage across Base Emitter Junction is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Voltage across Base Emitter Junction can be measured.

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