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Microwave Theory
Transconductance of the MESFET in Microwave Semiconductor Devices Formulas
Transconductance of the MESFET is a key parameter in MESFETs, representing the change in drain current with respect to the change in gate-source voltage. And is denoted by G
m
. Transconductance of the MESFET is usually measured using the Siemens for Electric Conductance. Note that the value of Transconductance of the MESFET is always positive.
Formulas to find Transconductance of the MESFET in Microwave Semiconductor Devices
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Transconductance in Saturation Region in MESFET
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Microwave Semiconductor Devices formulas that make use of Transconductance of the MESFET
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MESFET Cutoff Frequency
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Noise Factor GaAs MESFET
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List of variables in Microwave Semiconductor Devices formulas
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Output Conductance
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Input Voltage
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Threshold Voltage
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Pinch-off Voltage
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FAQ
What is the Transconductance of the MESFET?
Transconductance of the MESFET is a key parameter in MESFETs, representing the change in drain current with respect to the change in gate-source voltage. Transconductance of the MESFET is usually measured using the Siemens for Electric Conductance. Note that the value of Transconductance of the MESFET is always positive.
Can the Transconductance of the MESFET be negative?
No, the Transconductance of the MESFET, measured in Electric Conductance cannot be negative.
What unit is used to measure Transconductance of the MESFET?
Transconductance of the MESFET is usually measured using the Siemens[S] for Electric Conductance. Megasiemens[S], Millisiemens[S], Mho[S] are the few other units in which Transconductance of the MESFET can be measured.
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