Transconductance in Microwave Semiconductor Devices Formulas

Transconductance is defined as the ratio of the change in drain current to the change in gate-source voltage, assuming a constant drain-source voltage. And is denoted by g_m. Transconductance is usually measured using the Siemens for Transconductance. Note that the value of Transconductance is always negative.

Formulas to find Transconductance in Microwave Semiconductor Devices

fxTransconductance in MESFETGo

fxTransconductance in Saturation RegionGo

Microwave Semiconductor Devices formulas that make use of Transconductance

fxGate Source CapacitanceGo

fxCut-off Frequency given Transconductance and CapacitanceGo

fxMaximum Frequency of Oscillation given TransconductanceGo

List of variables in Microwave Semiconductor Devices formulas

fx Gate Source Capacitance Go

fx Cut-off Frequency Go

fx Output Conductance Go

fx Schottky Diode Potential Barrier Go

fx Gate Voltage Go

fx Pinch Off Voltage Go

FAQ

What is the Transconductance?

Transconductance is defined as the ratio of the change in drain current to the change in gate-source voltage, assuming a constant drain-source voltage. Transconductance is usually measured using the Siemens for Transconductance. Note that the value of Transconductance is always negative.

Can the Transconductance be negative?

Yes, the Transconductance, measured in Transconductance can be negative.

What unit is used to measure Transconductance?

Transconductance is usually measured using the Siemens[S] for Transconductance. Millisiemens[S] are the few other units in which Transconductance can be measured.

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