Total Transit Time in Microwave Semiconductor Devices Formulas

Total Transit Time in a BJT is the duration for charge carriers to traverse the transistor, covering base and collector-emitter region transit times. And is denoted by τ_tt. Total Transit Time is usually measured using the Microsecond for Time. Note that the value of Total Transit Time is always positive.

Formulas to find Total Transit Time in Microwave Semiconductor Devices

fxTotal Transit TimeGo

List of variables in Microwave Semiconductor Devices formulas

fx Base Transit Time Go

fx Collector Depletion Region Go

FAQ

What is the Total Transit Time?

Total Transit Time in a BJT is the duration for charge carriers to traverse the transistor, covering base and collector-emitter region transit times. Total Transit Time is usually measured using the Microsecond for Time. Note that the value of Total Transit Time is always positive.

Can the Total Transit Time be negative?

No, the Total Transit Time, measured in Time cannot be negative.

What unit is used to measure Total Transit Time?

Total Transit Time is usually measured using the Microsecond[μs] for Time. Second[μs], Millisecond[μs], Nanosecond[μs] are the few other units in which Total Transit Time can be measured.

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