Total Instantaneous Drain Voltage in BJT Formulas

Total Instantaneous Drain Voltage is the voltage that falls across the gate-source terminal of the transistor. And is denoted by V_DS. Total Instantaneous Drain Voltage is usually measured using the Volt for Electric Potential. Note that the value of Total Instantaneous Drain Voltage is always negative.

Formulas to find Total Instantaneous Drain Voltage in BJT

fxSingle Component of Drain VoltageGo

fxSingle Component of Drain Voltage given TransconductanceGo

List of variables in BJT formulas

fx Change in Drain Current Go

fx Load Resistance Go

fx Transconductance Go

fx Input Voltage Go

FAQ

What is the Total Instantaneous Drain Voltage?

Total Instantaneous Drain Voltage is the voltage that falls across the gate-source terminal of the transistor. Total Instantaneous Drain Voltage is usually measured using the Volt for Electric Potential. Note that the value of Total Instantaneous Drain Voltage is always negative.

Can the Total Instantaneous Drain Voltage be negative?

Yes, the Total Instantaneous Drain Voltage, measured in Electric Potential can be negative.

What unit is used to measure Total Instantaneous Drain Voltage?

Total Instantaneous Drain Voltage is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Total Instantaneous Drain Voltage can be measured.

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