Source Parasitic Capacitance in VLSI Fabrication Formulas

Source Parasitic Capacitance is an unavoidable and usually unwanted capacitance. And is denoted by C_sop. Source Parasitic Capacitance is usually measured using the Microfarad per Square Millimeter for Oxide Capacitance Per Unit Area. Note that the value of Source Parasitic Capacitance is always positive.

Formulas to find Source Parasitic Capacitance in VLSI Fabrication

fxTotal Source Parasitic CapacitanceGo

List of variables in VLSI Fabrication formulas

fx Capacitance between Junction of Body and Source Go

fx Area of Source Diffusion Go

fx Capacitance between Junction of Body and Side wall Go

fx Sidewall Perimeter of Source Diffusion Go

FAQ

What is the Source Parasitic Capacitance?

Source Parasitic Capacitance is an unavoidable and usually unwanted capacitance. Source Parasitic Capacitance is usually measured using the Microfarad per Square Millimeter for Oxide Capacitance Per Unit Area. Note that the value of Source Parasitic Capacitance is always positive.

Can the Source Parasitic Capacitance be negative?

No, the Source Parasitic Capacitance, measured in Oxide Capacitance Per Unit Area cannot be negative.

What unit is used to measure Source Parasitic Capacitance?

Source Parasitic Capacitance is usually measured using the Microfarad per Square Millimeter[μF/mm²] for Oxide Capacitance Per Unit Area. Farad per Square Meter[μF/mm²], Nanofarad per Square Centimeter[μF/mm²], Microfarad per Square Centimeter[μF/mm²] are the few other units in which Source Parasitic Capacitance can be measured.

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