Source Body Potential Difference in VLSI Fabrication Formulas

Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor. And is denoted by V_sb. Source Body Potential Difference is usually measured using the Volt for Electric Potential. Note that the value of Source Body Potential Difference is always positive.

Formulas to find Source Body Potential Difference in VLSI Fabrication

fxPotential between Source to BodyGo

VLSI Fabrication formulas that make use of Source Body Potential Difference

fxBody Effect CoefficientGo

fxSubthreshold SlopeGo

fxSurface PotentialGo

List of variables in VLSI Fabrication formulas

fx Surface Potential Go

fx Acceptor Concentration Go

fx Intrinsic Concentration Go

FAQ

What is the Source Body Potential Difference?

Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor. Source Body Potential Difference is usually measured using the Volt for Electric Potential. Note that the value of Source Body Potential Difference is always positive.

Can the Source Body Potential Difference be negative?

No, the Source Body Potential Difference, measured in Electric Potential cannot be negative.

What unit is used to measure Source Body Potential Difference?

Source Body Potential Difference is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Source Body Potential Difference can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!