Sidewall Perimeter of Source Diffusion in VLSI Fabrication Formulas

Sidewall Perimeter of Source Diffusion is defined as perimeter of source diffusion not including edge under gate. And is denoted by P_s. Sidewall Perimeter of Source Diffusion is usually measured using the Millimeter for Length. Note that the value of Sidewall Perimeter of Source Diffusion is always positive.

VLSI Fabrication formulas that make use of Sidewall Perimeter of Source Diffusion

fxTotal Source Parasitic CapacitanceGo

FAQ

What is the Sidewall Perimeter of Source Diffusion?

Sidewall Perimeter of Source Diffusion is defined as perimeter of source diffusion not including edge under gate. Sidewall Perimeter of Source Diffusion is usually measured using the Millimeter for Length. Note that the value of Sidewall Perimeter of Source Diffusion is always positive.

Can the Sidewall Perimeter of Source Diffusion be negative?

No, the Sidewall Perimeter of Source Diffusion, measured in Length cannot be negative.

What unit is used to measure Sidewall Perimeter of Source Diffusion?

Sidewall Perimeter of Source Diffusion is usually measured using the Millimeter[mm] for Length. Meter[mm], Kilometer[mm], Decimeter[mm] are the few other units in which Sidewall Perimeter of Source Diffusion can be measured.

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