Saturation Electron Drift Velocity in VLSI Fabrication Formulas

Saturation Electron Drift Velocity is defined as the maximum velocity reached by electrons in a semiconductor material under the influence of an electric field. And is denoted by v_d(sat). Saturation Electron Drift Velocity is usually measured using the Centimeter per Second for Speed. Note that the value of Saturation Electron Drift Velocity is always positive.

VLSI Fabrication formulas that make use of Saturation Electron Drift Velocity

fxShort Channel Saturation Current VLSIGo

FAQ

What is the Saturation Electron Drift Velocity?

Saturation Electron Drift Velocity is defined as the maximum velocity reached by electrons in a semiconductor material under the influence of an electric field. Saturation Electron Drift Velocity is usually measured using the Centimeter per Second for Speed. Note that the value of Saturation Electron Drift Velocity is always positive.

Can the Saturation Electron Drift Velocity be negative?

No, the Saturation Electron Drift Velocity, measured in Speed cannot be negative.

What unit is used to measure Saturation Electron Drift Velocity?

Saturation Electron Drift Velocity is usually measured using the Centimeter per Second[cm/s] for Speed. Meter per Second[cm/s], Meter per Minute[cm/s], Meter per Hour[cm/s] are the few other units in which Saturation Electron Drift Velocity can be measured.

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