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VLSI Fabrication
Saturation Drain Source Voltage in VLSI Fabrication Formulas
Saturation Drain Source Voltage is defined as the voltage across the drain and source terminals of a MOSFET when the transistor is operating in saturation mode. And is denoted by V
Dsat
. Saturation Drain Source Voltage is usually measured using the Volt for Electric Potential. Note that the value of Saturation Drain Source Voltage is always positive.
VLSI Fabrication formulas that make use of Saturation Drain Source Voltage
f
x
Short Channel Saturation Current VLSI
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FAQ
What is the Saturation Drain Source Voltage?
Saturation Drain Source Voltage is defined as the voltage across the drain and source terminals of a MOSFET when the transistor is operating in saturation mode. Saturation Drain Source Voltage is usually measured using the Volt for Electric Potential. Note that the value of Saturation Drain Source Voltage is always positive.
Can the Saturation Drain Source Voltage be negative?
No, the Saturation Drain Source Voltage, measured in Electric Potential cannot be negative.
What unit is used to measure Saturation Drain Source Voltage?
Saturation Drain Source Voltage is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Saturation Drain Source Voltage can be measured.
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