Saturated Drift Velocity in Microwave Semiconductor Devices Formulas

Saturated Drift Velocity is the maximum velocity that can travel in a charge carrier of a semiconductor. And is denoted by V_s. Saturated Drift Velocity is usually measured using the Millimeter per Second for Speed. Note that the value of Saturated Drift Velocity is always positive.

Microwave Semiconductor Devices formulas that make use of Saturated Drift Velocity

fxGate Length of MESFETGo

fxCut-off FrequencyGo

FAQ

What is the Saturated Drift Velocity?

Saturated Drift Velocity is the maximum velocity that can travel in a charge carrier of a semiconductor. Saturated Drift Velocity is usually measured using the Millimeter per Second for Speed. Note that the value of Saturated Drift Velocity is always positive.

Can the Saturated Drift Velocity be negative?

No, the Saturated Drift Velocity, measured in Speed cannot be negative.

What unit is used to measure Saturated Drift Velocity?

Saturated Drift Velocity is usually measured using the Millimeter per Second[mm/s] for Speed. Meter per Second[mm/s], Meter per Minute[mm/s], Meter per Hour[mm/s] are the few other units in which Saturated Drift Velocity can be measured.

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