Resistance of Collector and Emitter (IGBT) in Advanced Transistor Devices Formulas

Resistance of Collector and Emitter (IGBT), also known as the on-state resistance (R<sub>on</sub>) , is the resistance that the IGBT presents to the flow of current. And is denoted by R_ce(igbt). Resistance of Collector and Emitter (IGBT) is usually measured using the Kilohm for Electric Resistance. Note that the value of Resistance of Collector and Emitter (IGBT) is always positive.

Advanced Transistor Devices formulas that make use of Resistance of Collector and Emitter (IGBT)

fxNominal Continuous Collector Current of IGBTGo

FAQ

What is the Resistance of Collector and Emitter (IGBT)?

Resistance of Collector and Emitter (IGBT), also known as the on-state resistance (R<sub>on</sub>) , is the resistance that the IGBT presents to the flow of current. Resistance of Collector and Emitter (IGBT) is usually measured using the Kilohm for Electric Resistance. Note that the value of Resistance of Collector and Emitter (IGBT) is always positive.

Can the Resistance of Collector and Emitter (IGBT) be negative?

No, the Resistance of Collector and Emitter (IGBT), measured in Electric Resistance cannot be negative.

What unit is used to measure Resistance of Collector and Emitter (IGBT)?

Resistance of Collector and Emitter (IGBT) is usually measured using the Kilohm[kΩ] for Electric Resistance. Ohm[kΩ], Megohm[kΩ], Microhm[kΩ] are the few other units in which Resistance of Collector and Emitter (IGBT) can be measured.

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