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Process Transconductance Parameter in PMOS in MOSFET Formulas
The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor. And is denoted by k'
p
. Process Transconductance Parameter in PMOS is usually measured using the Millisiemens for Electric Conductance. Note that the value of Process Transconductance Parameter in PMOS is always negative.
Formulas to find Process Transconductance Parameter in PMOS in MOSFET
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Process Transconductance Parameter of PMOS
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MOSFET formulas that make use of Process Transconductance Parameter in PMOS
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Drain Current given NMOS Operates as Voltage-Controlled Current Source
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Drain Current in Triode Region of PMOS Transistor
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Drain Current in Triode Region of PMOS Transistor given Vsd
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Drain Current in Saturation Region of PMOS Transistor
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Drain Current in Saturation Region of PMOS Transistor given Vov
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Overall Drain Current of PMOS Transistor
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List of variables in MOSFET formulas
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Mobility of Holes in Channel
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Oxide Capacitance
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FAQ
What is the Process Transconductance Parameter in PMOS?
The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor. Process Transconductance Parameter in PMOS is usually measured using the Millisiemens for Electric Conductance. Note that the value of Process Transconductance Parameter in PMOS is always negative.
Can the Process Transconductance Parameter in PMOS be negative?
Yes, the Process Transconductance Parameter in PMOS, measured in Electric Conductance can be negative.
What unit is used to measure Process Transconductance Parameter in PMOS?
Process Transconductance Parameter in PMOS is usually measured using the Millisiemens[mS] for Electric Conductance. Siemens[mS], Megasiemens[mS], Mho[mS] are the few other units in which Process Transconductance Parameter in PMOS can be measured.
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