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Process Transconductance Parameter in NMOS in MOSFET Formulas
The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor. And is denoted by k'
n
. Process Transconductance Parameter in NMOS is usually measured using the Millisiemens for Electric Conductance. Note that the value of Process Transconductance Parameter in NMOS is always negative.
MOSFET formulas that make use of Process Transconductance Parameter in NMOS
f
x
Current Entering Drain Terminal of NMOS given Gate Source Voltage
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f
x
Current Entering Drain-Source in Triode Region of NMOS
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f
x
Current Entering Drain-Source at Saturation Region of NMOS
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f
x
Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage
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f
x
Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS
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f
x
Drain Current when NMOS Operates as Voltage-Controlled Current Source
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f
x
Current Entering Drain Terminal of NMOS
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FAQ
What is the Process Transconductance Parameter in NMOS?
The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor. Process Transconductance Parameter in NMOS is usually measured using the Millisiemens for Electric Conductance. Note that the value of Process Transconductance Parameter in NMOS is always negative.
Can the Process Transconductance Parameter in NMOS be negative?
Yes, the Process Transconductance Parameter in NMOS, measured in Electric Conductance can be negative.
What unit is used to measure Process Transconductance Parameter in NMOS?
Process Transconductance Parameter in NMOS is usually measured using the Millisiemens[mS] for Electric Conductance. Siemens[mS], Megasiemens[mS], Mho[mS] are the few other units in which Process Transconductance Parameter in NMOS can be measured.
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