Process Transconductance Parameter in MOSFET Formulas

The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor. And is denoted by k'_n. Process Transconductance Parameter is usually measured using the Ampere per Square Volt for Transconductance Parameter. Note that the value of Process Transconductance Parameter is always negative.

MOSFET formulas that make use of Process Transconductance Parameter

fxVoltage across Gate and Source of MOSFET on Operation with Differential Input VoltageGo

fxAmplification Factor for Small Signal MOSFET ModelGo

FAQ

What is the Process Transconductance Parameter?

The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor. Process Transconductance Parameter is usually measured using the Ampere per Square Volt for Transconductance Parameter. Note that the value of Process Transconductance Parameter is always negative.

Can the Process Transconductance Parameter be negative?

Yes, the Process Transconductance Parameter, measured in Transconductance Parameter can be negative.

What unit is used to measure Process Transconductance Parameter?

Process Transconductance Parameter is usually measured using the Ampere per Square Volt[A/V²] for Transconductance Parameter. Milliampere per Square Volt[A/V²], Microampere per Square Volt[A/V²] are the few other units in which Process Transconductance Parameter can be measured.

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