Process Transconductance in PMOS in MOSFET Formulas

Process transconductance in PMOS refers to the gain of a PMOS transistor with respect to its gate-source voltage. And is denoted by k'_p. Process Transconductance in PMOS is usually measured using the Millisiemens for Electric Conductance. Note that the value of Process Transconductance in PMOS is always negative.

MOSFET formulas that make use of Process Transconductance in PMOS

fxDrain Current without Channel-Length Modulation of MOSFETGo

fxDrain Saturation Current of MOSFETGo

FAQ

What is the Process Transconductance in PMOS?

Process transconductance in PMOS refers to the gain of a PMOS transistor with respect to its gate-source voltage. Process Transconductance in PMOS is usually measured using the Millisiemens for Electric Conductance. Note that the value of Process Transconductance in PMOS is always negative.

Can the Process Transconductance in PMOS be negative?

Yes, the Process Transconductance in PMOS, measured in Electric Conductance can be negative.

What unit is used to measure Process Transconductance in PMOS?

Process Transconductance in PMOS is usually measured using the Millisiemens[mS] for Electric Conductance. Siemens[mS], Megasiemens[mS], Mho[mS] are the few other units in which Process Transconductance in PMOS can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!