Oxide capacitance after voltage scaling in VLSI Fabrication Formulas

Oxide capacitance after voltage scaling is refers to the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling. And is denoted by C_ox(vs)'. Oxide capacitance after voltage scaling is usually measured using the Nanofarad per Square Centimeter for Oxide Capacitance Per Unit Area. Note that the value of Oxide capacitance after voltage scaling is always positive.

Formulas to find Oxide capacitance after voltage scaling in VLSI Fabrication

fxOxide Capacitance after Voltage Scaling VLSIGo

List of variables in VLSI Fabrication formulas

fx Scaling Factor Go

fx Oxide Capacitance per Unit Area Go

FAQ

What is the Oxide capacitance after voltage scaling?

Oxide capacitance after voltage scaling is refers to the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling. Oxide capacitance after voltage scaling is usually measured using the Nanofarad per Square Centimeter for Oxide Capacitance Per Unit Area. Note that the value of Oxide capacitance after voltage scaling is always positive.

Can the Oxide capacitance after voltage scaling be negative?

No, the Oxide capacitance after voltage scaling, measured in Oxide Capacitance Per Unit Area cannot be negative.

What unit is used to measure Oxide capacitance after voltage scaling?

Oxide capacitance after voltage scaling is usually measured using the Nanofarad per Square Centimeter[nF/cm²] for Oxide Capacitance Per Unit Area. Farad per Square Meter[nF/cm²], Microfarad per Square Centimeter[nF/cm²], Microfarad per Square Millimeter[nF/cm²] are the few other units in which Oxide capacitance after voltage scaling can be measured.

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