Mobility of Holes in Channel in MOSFET Formulas

Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field. And is denoted by μ_p. Mobility of Holes in Channel is usually measured using the Square Meter per Volt per Second for Mobility. Note that the value of Mobility of Holes in Channel is always negative.

MOSFET formulas that make use of Mobility of Holes in Channel

fxProcess Transconductance Parameter of PMOSGo

fxCurrent in Inversion Channel of PMOS given MobilityGo

fxDrain Current from Source to DrainGo

FAQ

What is the Mobility of Holes in Channel?

Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field. Mobility of Holes in Channel is usually measured using the Square Meter per Volt per Second for Mobility. Note that the value of Mobility of Holes in Channel is always negative.

Can the Mobility of Holes in Channel be negative?

Yes, the Mobility of Holes in Channel, measured in Mobility can be negative.

What unit is used to measure Mobility of Holes in Channel?

Mobility of Holes in Channel is usually measured using the Square Meter per Volt per Second[m²/V*s] for Mobility. Square Centimeter per Volt Second[m²/V*s] are the few other units in which Mobility of Holes in Channel can be measured.

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