Inversion Layer Charge in MOSFET Formulas

Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode. And is denoted by Q_p. Inversion Layer Charge is usually measured using the Coulomb per Square Meter for Surface Charge Density. Note that the value of Inversion Layer Charge is always negative.

Formulas to find Inversion Layer Charge in MOSFET

fxInversion Layer Charge in PMOSGo

fxInversion Layer Charge at Pinch-Off Condition in PMOSGo

MOSFET formulas that make use of Inversion Layer Charge

fxCurrent in Inversion Channel of PMOSGo

fxDrain Current from Source to DrainGo

List of variables in MOSFET formulas

fx Oxide Capacitance Go

fx Voltage between Gate and Source Go

fx Threshold Voltage Go

fx Voltage between Drain and Source Go

FAQ

What is the Inversion Layer Charge?

Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode. Inversion Layer Charge is usually measured using the Coulomb per Square Meter for Surface Charge Density. Note that the value of Inversion Layer Charge is always negative.

Can the Inversion Layer Charge be negative?

Yes, the Inversion Layer Charge, measured in Surface Charge Density can be negative.

What unit is used to measure Inversion Layer Charge?

Inversion Layer Charge is usually measured using the Coulomb per Square Meter[C/m²] for Surface Charge Density. Coulomb per Square Centimeter[C/m²], Coulomb per Square Inch[C/m²], Abcoulomb per Square Meter[C/m²] are the few other units in which Inversion Layer Charge can be measured.

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