Intrinsic Electron Concentration in CMOS Design and Applications Formulas

Intrinsic Electron Concentration is defined as the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material. And is denoted by n_i.

CMOS Design and Applications formulas that make use of Intrinsic Electron Concentration

fxBuilt-in PotentialGo

fxThermal Voltage of CMOSGo

FAQ

What is the Intrinsic Electron Concentration?

Intrinsic Electron Concentration is defined as the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

Can the Intrinsic Electron Concentration be negative?

{YesorNo}, the Intrinsic Electron Concentration, measured in {OutputVariableMeasurementName} {CanorCannot} be negative.

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