Intrinsic Concentration in VLSI Fabrication Formulas

Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium. And is denoted by N_i. Intrinsic Concentration is usually measured using the 1 per Cubic Centimeter for Carrier Concentration. Note that the value of Intrinsic Concentration is always positive.

VLSI Fabrication formulas that make use of Intrinsic Concentration

fxSurface PotentialGo

fxJunction Built-in Voltage VLSIGo

fxPotential between Source to BodyGo

FAQ

What is the Intrinsic Concentration?

Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium. Intrinsic Concentration is usually measured using the 1 per Cubic Centimeter for Carrier Concentration. Note that the value of Intrinsic Concentration is always positive.

Can the Intrinsic Concentration be negative?

No, the Intrinsic Concentration, measured in Carrier Concentration cannot be negative.

What unit is used to measure Intrinsic Concentration?

Intrinsic Concentration is usually measured using the 1 per Cubic Centimeter[1/cm³] for Carrier Concentration. 1 per Cubic Meter[1/cm³], per Liter[1/cm³] are the few other units in which Intrinsic Concentration can be measured.

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