Intrinsic Carrier Concentration in Solid State Devices Formulas

Intrinsic Carrier Concentration is used to describe the concentration of charge carriers (electrons and holes) in an intrinsic or undoped semiconductor material at thermal equilibrium. And is denoted by n_i. Intrinsic Carrier Concentration is usually measured using the 1 per Cubic Meter for Carrier Concentration. Note that the value of Intrinsic Carrier Concentration is always positive.

Formulas to find Intrinsic Carrier Concentration in Solid State Devices

fxIntrinsic Carrier ConcentrationGo

Solid State Devices formulas that make use of Intrinsic Carrier Concentration

fxNet Rate of Change in Conduction BandGo

fxThermal Generation RateGo

List of variables in Solid State Devices formulas

fx Effective Density of State in Valence Band Go

fx Effective Density of State in Conduction Band Go

fx Energy Gap Go

fx Temperature Go

FAQ

What is the Intrinsic Carrier Concentration?

Intrinsic Carrier Concentration is used to describe the concentration of charge carriers (electrons and holes) in an intrinsic or undoped semiconductor material at thermal equilibrium. Intrinsic Carrier Concentration is usually measured using the 1 per Cubic Meter for Carrier Concentration. Note that the value of Intrinsic Carrier Concentration is always positive.

Can the Intrinsic Carrier Concentration be negative?

No, the Intrinsic Carrier Concentration, measured in Carrier Concentration cannot be negative.

What unit is used to measure Intrinsic Carrier Concentration?

Intrinsic Carrier Concentration is usually measured using the 1 per Cubic Meter[1/m³] for Carrier Concentration. 1 per Cubic Centimeter[1/m³], per Liter[1/m³] are the few other units in which Intrinsic Carrier Concentration can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!