Initial Fall Time (IGBT) in Advanced Transistor Devices Formulas

Initial Fall Time (IGBT) is the time it takes for the collector current to fall from 90% to 10% of its initial value after the gate voltage has been turned off. And is denoted by t_f1(igbt). Initial Fall Time (IGBT) is usually measured using the Second for Time. Note that the value of Initial Fall Time (IGBT) is always positive.

Advanced Transistor Devices formulas that make use of Initial Fall Time (IGBT)

fxIGBT Turn OFF TimeGo

FAQ

What is the Initial Fall Time (IGBT)?

Initial Fall Time (IGBT) is the time it takes for the collector current to fall from 90% to 10% of its initial value after the gate voltage has been turned off. Initial Fall Time (IGBT) is usually measured using the Second for Time. Note that the value of Initial Fall Time (IGBT) is always positive.

Can the Initial Fall Time (IGBT) be negative?

No, the Initial Fall Time (IGBT), measured in Time cannot be negative.

What unit is used to measure Initial Fall Time (IGBT)?

Initial Fall Time (IGBT) is usually measured using the Second[s] for Time. Millisecond[s], Microsecond[s], Nanosecond[s] are the few other units in which Initial Fall Time (IGBT) can be measured.

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