Horizontal Component of Electric Field in Channel in MOSFET Formulas

Horizontal Component of Electric Field in Channel is the strength of the electric field that exists in the material under the gate oxide layer, in the region where the inversion layer is formed. And is denoted by E_y. Horizontal Component of Electric Field in Channel is usually measured using the Volt per Meter for Electric Field Strength. Note that the value of Horizontal Component of Electric Field in Channel is always negative.

MOSFET formulas that make use of Horizontal Component of Electric Field in Channel

fxCurrent in Inversion Channel of PMOS given MobilityGo

fxDrain Current from Source to DrainGo

FAQ

What is the Horizontal Component of Electric Field in Channel?

Horizontal Component of Electric Field in Channel is the strength of the electric field that exists in the material under the gate oxide layer, in the region where the inversion layer is formed. Horizontal Component of Electric Field in Channel is usually measured using the Volt per Meter for Electric Field Strength. Note that the value of Horizontal Component of Electric Field in Channel is always negative.

Can the Horizontal Component of Electric Field in Channel be negative?

Yes, the Horizontal Component of Electric Field in Channel, measured in Electric Field Strength can be negative.

What unit is used to measure Horizontal Component of Electric Field in Channel?

Horizontal Component of Electric Field in Channel is usually measured using the Volt per Meter[V/m] for Electric Field Strength. Kilovolt per Meter[V/m], Millivolt per Meter[V/m], Microvolt per Meter[V/m] are the few other units in which Horizontal Component of Electric Field in Channel can be measured.

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