Hole Equilibrium Concentration in Integrated Circuits (IC) Formulas

Hole Equilibrium Concentration is a characteristic property of the material and is determined by intrinsic factors like the bandgap energy and temperature. And is denoted by p_n. Hole Equilibrium Concentration is usually measured using the 1 per Cubic Centimeter for Carrier Concentration. Note that the value of Hole Equilibrium Concentration is always positive.

Integrated Circuits (IC) formulas that make use of Hole Equilibrium Concentration

fxCurrent Density HoleGo

FAQ

What is the Hole Equilibrium Concentration?

Hole Equilibrium Concentration is a characteristic property of the material and is determined by intrinsic factors like the bandgap energy and temperature. Hole Equilibrium Concentration is usually measured using the 1 per Cubic Centimeter for Carrier Concentration. Note that the value of Hole Equilibrium Concentration is always positive.

Can the Hole Equilibrium Concentration be negative?

No, the Hole Equilibrium Concentration, measured in Carrier Concentration cannot be negative.

What unit is used to measure Hole Equilibrium Concentration?

Hole Equilibrium Concentration is usually measured using the 1 per Cubic Centimeter[1/cm³] for Carrier Concentration. 1 per Cubic Meter[1/cm³], per Liter[1/cm³] are the few other units in which Hole Equilibrium Concentration can be measured.

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