Hole Doping Silicon Mobility in Integrated Circuits (IC) Formulas

Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field. And is denoted by μ_p. Hole Doping Silicon Mobility is usually measured using the Square Centimeter per Volt Second for Mobility. Note that the value of Hole Doping Silicon Mobility is always positive.

Integrated Circuits (IC) formulas that make use of Hole Doping Silicon Mobility

fxOhmic Conductivity of ImpurityGo

fxConductivity of N-TypeGo

fxConductivity of P-TypeGo

FAQ

What is the Hole Doping Silicon Mobility?

Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field. Hole Doping Silicon Mobility is usually measured using the Square Centimeter per Volt Second for Mobility. Note that the value of Hole Doping Silicon Mobility is always positive.

Can the Hole Doping Silicon Mobility be negative?

No, the Hole Doping Silicon Mobility, measured in Mobility cannot be negative.

What unit is used to measure Hole Doping Silicon Mobility?

Hole Doping Silicon Mobility is usually measured using the Square Centimeter per Volt Second[cm²/V*s] for Mobility. Square Meter per Volt per Second[cm²/V*s] are the few other units in which Hole Doping Silicon Mobility can be measured.

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