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Opto Electronics Devices
Hole Concentration in n-Region in Opto Electronics Devices Formulas
Hole Concentration in n-Region is the number of holes per unit volume in the n type doped region of the p-n junction. And is denoted by p
n
. Hole Concentration in n-Region is usually measured using the 1 per Cubic Meter for Carrier Concentration. Note that the value of Hole Concentration in n-Region is always positive.
Opto Electronics Devices formulas that make use of Hole Concentration in n-Region
f
x
Saturation Current Density
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FAQ
What is the Hole Concentration in n-Region?
Hole Concentration in n-Region is the number of holes per unit volume in the n type doped region of the p-n junction. Hole Concentration in n-Region is usually measured using the 1 per Cubic Meter for Carrier Concentration. Note that the value of Hole Concentration in n-Region is always positive.
Can the Hole Concentration in n-Region be negative?
No, the Hole Concentration in n-Region, measured in Carrier Concentration cannot be negative.
What unit is used to measure Hole Concentration in n-Region?
Hole Concentration in n-Region is usually measured using the 1 per Cubic Meter[1/m³] for Carrier Concentration. 1 per Cubic Centimeter[1/m³], per Liter[1/m³] are the few other units in which Hole Concentration in n-Region can be measured.
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