Gate to Source Voltage in BJT Formulas

Gate to source voltage of transistor is the voltage that falls across the gate-source terminal of the transistor. And is denoted by V_gs. Gate to Source Voltage is usually measured using the Volt for Electric Potential. Note that the value of Gate to Source Voltage is always positive.

Formulas to find Gate to Source Voltage in BJT

fxTotal Instantaneous Gate-to-Source VoltageGo

fxVoltage between Gate and SourceGo

BJT formulas that make use of Gate to Source Voltage

fxTransconductance of BJT at Intrinsic GainGo

List of variables in BJT formulas

fx Small Signal Go

fx Voltage Across Oxide Go

fx Input Voltage Go

fx Transconductance Go

fx Resistance Go

FAQ

What is the Gate to Source Voltage?

Gate to source voltage of transistor is the voltage that falls across the gate-source terminal of the transistor. Gate to Source Voltage is usually measured using the Volt for Electric Potential. Note that the value of Gate to Source Voltage is always positive.

Can the Gate to Source Voltage be negative?

No, the Gate to Source Voltage, measured in Electric Potential cannot be negative.

What unit is used to measure Gate to Source Voltage?

Gate to Source Voltage is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Gate to Source Voltage can be measured.

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