Gate to Source Potential in VLSI Fabrication Formulas

Gate to Source Potential is voltage between gate and emitter. And is denoted by V_gs. Gate to Source Potential is usually measured using the Volt for Electric Potential. Note that the value of Gate to Source Potential is always positive.

Formulas to find Gate to Source Potential in VLSI Fabrication

fxGate to Source PotentialGo

VLSI Fabrication formulas that make use of Gate to Source Potential

fxGate to Collector PotentialGo

fxGate to Drain PotentialGo

List of variables in VLSI Fabrication formulas

fx Gate to Channel Voltage Go

fx Gate to Drain Potential Go

FAQ

What is the Gate to Source Potential?

Gate to Source Potential is voltage between gate and emitter. Gate to Source Potential is usually measured using the Volt for Electric Potential. Note that the value of Gate to Source Potential is always positive.

Can the Gate to Source Potential be negative?

No, the Gate to Source Potential, measured in Electric Potential cannot be negative.

What unit is used to measure Gate to Source Potential?

Gate to Source Potential is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Gate to Source Potential can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!