Gate to Source Capacitance in VLSI Fabrication Formulas

Gate to source Capacitance is defined as the capacitance that is observed between the gate and source of the Junction of MOSFET. And is denoted by C_gs. Gate to Source Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate to Source Capacitance is always positive.

Formulas to find Gate to Source Capacitance in VLSI Fabrication

fxGate to Source CapacitanceGo

VLSI Fabrication formulas that make use of Gate to Source Capacitance

fxGate to Base CapacitanceGo

fxGate to Drain CapacitanceGo

List of variables in VLSI Fabrication formulas

fx Gate Capacitance Go

fx Gate to Base Capacitance Go

fx Gate to Drain Capacitance Go

FAQ

What is the Gate to Source Capacitance?

Gate to source Capacitance is defined as the capacitance that is observed between the gate and source of the Junction of MOSFET. Gate to Source Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate to Source Capacitance is always positive.

Can the Gate to Source Capacitance be negative?

No, the Gate to Source Capacitance, measured in Capacitance cannot be negative.

What unit is used to measure Gate to Source Capacitance?

Gate to Source Capacitance is usually measured using the Microfarad[μF] for Capacitance. Farad[μF], Kilofarad[μF], Millifarad[μF] are the few other units in which Gate to Source Capacitance can be measured.

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