Gate to Drain Potential in VLSI Fabrication Formulas

Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs. And is denoted by V_gd. Gate to Drain Potential is usually measured using the Volt for Electric Potential. Note that the value of Gate to Drain Potential is always positive.

Formulas to find Gate to Drain Potential in VLSI Fabrication

fxGate to Drain PotentialGo

VLSI Fabrication formulas that make use of Gate to Drain Potential

fxGate to Collector PotentialGo

fxGate to Source PotentialGo

List of variables in VLSI Fabrication formulas

fx Gate to Channel Voltage Go

fx Gate to Source Potential Go

FAQ

What is the Gate to Drain Potential?

Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs. Gate to Drain Potential is usually measured using the Volt for Electric Potential. Note that the value of Gate to Drain Potential is always positive.

Can the Gate to Drain Potential be negative?

No, the Gate to Drain Potential, measured in Electric Potential cannot be negative.

What unit is used to measure Gate to Drain Potential?

Gate to Drain Potential is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Gate to Drain Potential can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!