Gate to Drain Capacitance in VLSI Fabrication Formulas

Gate to Drain Capacitance is defined as the capacitance that is observed between the gate and drain of the Junction of MOSFET. And is denoted by C_gd. Gate to Drain Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate to Drain Capacitance is always positive.

Formulas to find Gate to Drain Capacitance in VLSI Fabrication

fxGate to Drain CapacitanceGo

VLSI Fabrication formulas that make use of Gate to Drain Capacitance

fxGate to Base CapacitanceGo

fxGate to Source CapacitanceGo

List of variables in VLSI Fabrication formulas

fx Gate Capacitance Go

fx Gate to Base Capacitance Go

fx Gate to Source Capacitance Go

FAQ

What is the Gate to Drain Capacitance?

Gate to Drain Capacitance is defined as the capacitance that is observed between the gate and drain of the Junction of MOSFET. Gate to Drain Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate to Drain Capacitance is always positive.

Can the Gate to Drain Capacitance be negative?

No, the Gate to Drain Capacitance, measured in Capacitance cannot be negative.

What unit is used to measure Gate to Drain Capacitance?

Gate to Drain Capacitance is usually measured using the Microfarad[μF] for Capacitance. Farad[μF], Kilofarad[μF], Millifarad[μF] are the few other units in which Gate to Drain Capacitance can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!