Gate to Drain Capacitance in High Frequency Response Amplifiers Formulas

Gate to Drain Capacitance is defined as the capacitance that is observed between the gate and drain of the Junction of MOSFET. And is denoted by C_gd. Gate to Drain Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate to Drain Capacitance is always positive.

High Frequency Response Amplifiers formulas that make use of Gate to Drain Capacitance

fxSecond Pole-Frequency of CG AmplifierGo

fxOpen Circuit Time Constant between Gate and Drain of Common Gate AmplifierGo

fxOpen Circuit Time Constant in High Frequency Response of CG AmplifierGo

fxSource-Degenerated Time Constant of CS AmplifierGo

fxSource-Degenerated Gain-Bandwidth Product of CS AmplifierGo

fx3-DB Frequency in Design Insight and Trade-OffGo

fxGain Bandwidth ProductGo

fxConstant 2 of Source Follower Transfer FunctionGo

FAQ

What is the Gate to Drain Capacitance?

Gate to Drain Capacitance is defined as the capacitance that is observed between the gate and drain of the Junction of MOSFET. Gate to Drain Capacitance is usually measured using the Microfarad for Capacitance. Note that the value of Gate to Drain Capacitance is always positive.

Can the Gate to Drain Capacitance be negative?

No, the Gate to Drain Capacitance, measured in Capacitance cannot be negative.

What unit is used to measure Gate to Drain Capacitance?

Gate to Drain Capacitance is usually measured using the Microfarad[μF] for Capacitance. Farad[μF], Kilofarad[μF], Millifarad[μF] are the few other units in which Gate to Drain Capacitance can be measured.

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