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Gate to Collector Capacitance (IGBT) in Advanced Transistor Devices Formulas
Gate to Collector Capacitance (IGBT) also known as the Miller capacitance, is a parasitic capacitance that exists between the gate and collector terminals of an IGBT. And is denoted by C
(g-c)(igbt)
. Gate to Collector Capacitance (IGBT) is usually measured using the Farad for Capacitance. Note that the value of Gate to Collector Capacitance (IGBT) is always positive.
Advanced Transistor Devices formulas that make use of Gate to Collector Capacitance (IGBT)
f
x
Input Capacitance of IGBT
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FAQ
What is the Gate to Collector Capacitance (IGBT)?
Gate to Collector Capacitance (IGBT) also known as the Miller capacitance, is a parasitic capacitance that exists between the gate and collector terminals of an IGBT. Gate to Collector Capacitance (IGBT) is usually measured using the Farad for Capacitance. Note that the value of Gate to Collector Capacitance (IGBT) is always positive.
Can the Gate to Collector Capacitance (IGBT) be negative?
No, the Gate to Collector Capacitance (IGBT), measured in Capacitance cannot be negative.
What unit is used to measure Gate to Collector Capacitance (IGBT)?
Gate to Collector Capacitance (IGBT) is usually measured using the Farad[F] for Capacitance. Kilofarad[F], Millifarad[F], Microfarad[F] are the few other units in which Gate to Collector Capacitance (IGBT) can be measured.
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